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超精密加工中铜表面CMP后残余金属氧化物的去除

发布时间:2018-11-27 12:39
【摘要】:多层铜布线经过化学机械平坦化(CMP)后,铜线条表面会残留CuO颗粒,它会对器件的稳定性有很大的影响,因此在CMP后清洗时必须把CuO从铜表面去除。这就要求有一种可以有效去除铜表面CuO的清洗剂。本研究中提出的新型复合清洗剂主要解决两个问题:一个是CuO的去除,另一个是防止清洗液对铜表面造成腐蚀。清洗剂的主要成分有两种,一种是FA/OⅡ型碱性螯合剂,它主要用来去除CuO,另一种是FA/OI型表面活性剂,它主要用来解决铜表面的腐蚀问题。通过在铜光片的表面生成氧化铜膜层,利用清洗剂对氧化层的清洗能力来反映其对于CuO的去除能力。表面活性剂的抗腐蚀能力主要通过电化学实验来反映。最后通过对清洗后12英寸图形片上的缺陷分析,验证清洗液对抛光后铜表面残余CuO实际清洗效果。结果表明,本文提出的复合清洗剂在不腐蚀铜表面的前提下能有效去除CuO,并且对晶圆表面缺陷的整体去除效果良好。
[Abstract]:After the multilayer copper wiring has been chemically and mechanically flattened (CMP), CuO particles will remain on the copper wire strip surface, which will have a great influence on the stability of the device. Therefore, the CuO must be removed from the copper surface during the cleaning after CMP. This requires a cleaning agent that can effectively remove CuO from copper surfaces. The new compound cleaning agent proposed in this study mainly solves two problems: one is the removal of CuO and the other is to prevent the corrosion of copper surface caused by cleaning liquid. There are two main components of cleaning agent, one is FA/O 鈪,

本文编号:2360809

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