Design of an Electrically Written and Optically Read Non-vol

发布时间：2021-10-16 06:50

　　Exploiting new concepts for dense,fast,and nonvolatile random access memory with reduced energy consumption is a significant issue for information technology.Here we design an ’electrically written and optically read’information storage device employing BiFeO₃/Au heterostructures with strong absorption resonance.The electrooptic effect is the basis for the device design,which arises from the strong absorption resonance in BiFeO₃/Au heterostructures and the electrically tuna... 

【文章来源】：Chinese Physics Letters. 2015,32(07)SCICSCD

【文章页数】：4 页


本文编号：3439360