Non-volatile optical memory in vertical van der Waals hetero
发布时间:2022-10-09 12:24
Emulating synaptic plasticity in an artificial neural network is crucial to mimic the basic functions of the human brain.In this work, we report a new optoelectronic resistive random access memory(ORRAM) in a three-layer vertical heterostructure of graphene/Cd Se quantum dots(QDs)/graphene, which shows non-volatile multi-level optical memory under optical stimuli,giving rise to light-tunable synaptic behaviors. The optical non-volatile storage time is up to ~450 s. The device realizes the functi...
【文章页数】:5 页
【参考文献】:
期刊论文
[1]Surface traps-related nonvolatile resistive switching memory effect in a single SnO2:Sm nanowire[J]. Huiying Zhou,Haiping Shi,Baochang Cheng. Journal of Semiconductors. 2020(01)
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本文编号:3688632
【文章页数】:5 页
【参考文献】:
期刊论文
[1]Surface traps-related nonvolatile resistive switching memory effect in a single SnO2:Sm nanowire[J]. Huiying Zhou,Haiping Shi,Baochang Cheng. Journal of Semiconductors. 2020(01)
[2]Resistive random access memory and its applications in storage and nonvolatile logic[J]. Dongbin Zhu,Yi Li,Wensheng Shen,Zheng Zhou,Lifeng Liu,Xing Zhang. Journal of Semiconductors. 2017(07)
[3]基于锗硅异质纳米晶的非易失浮栅存储器的存储特性[J]. 闾锦,陈裕斌,左正,施毅,濮林,郑有炓. 半导体学报. 2008(04)
本文编号:3688632
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