气体漩涡式硅片夹持输送系统的设计
发布时间:2018-03-05 00:03
本文选题:气体漩涡 切入点:悬浮 出处:《浙江大学》2012年硕士论文 论文类型:学位论文
【摘要】:随着集成电子技术的不断发展,硅片直径不断增大,硅片厚度不断变薄,硅片表面的平整度、精度要求不断升高。随着450mm直径硅片的时代即将来临,其精度要求为纳米级,传统的硅片夹持方式容易损伤硅片,使硅片表面造成划痕等,逐渐不能满足新的要求。本文根据漩涡中心产生负压的原理,研究并设计漩涡吸盘,使硅片悬浮于空中,避免硅片表面受到损伤。相对其它夹持方式,这种夹持方式使硅片表面应力分布均匀,可最大限度地避免硅片表面受到伤害。由于漩涡的不稳定性,单个漩涡吸盘无法实现正常的夹持功能,通过集成吸盘的引入,实现了硅片的稳定夹持,并且这种集成吸盘非常适合大直径硅片的夹持,通过PLC编程实现了硅片的自动化夹持输送。主要工作如下: 1、利用流体力学中的理论,对理想漩涡和吸盘产生的实际漩涡进行详细的理论分析,分析出各种可能影响硅片夹持功能的参数,结构参数包括吸盘气腔半径、气腔高度、进气小孔的形状大小及其离气腔上表面的位置等,外部参数包括进气气压和流量等,预测他们对硅片可能产生的影响。 2、利用压力传感器测量出硅片表面的压力分布,利用电子称重传感器测量夹持力,对漩涡吸盘工作时各种参数对夹持力的影响进行分析,如夹持力随气腔半径、气腔高度、进口气压等的变化趋势等,选用最好的一组实验参数,测量硅片表面的压力分布情况。 3、通过理论和实验分析,单漩涡吸盘不能消除扭矩,只能削弱其影响,为此设计了一些特殊结构的漩涡吸盘。 4、在单漩涡吸盘大量的实验研究基础上,对单吸盘进行集成组合,消除了硅片扭转、翻转、震荡现象,但平移现象依然存在,因此设计了采用气动方式控制的自动挡杆机构,消除了平移现象,最终实现了稳定夹持。 5、采用气动传输方式,通过PLC编程实现硅片的自动化夹持输送。
[Abstract]:With the development of integrated electronic technology, the diameter of silicon wafer is increasing, the thickness of silicon wafer is thinning, the flatness and precision of silicon wafer surface are increasing, and with the coming of the era of 450mm diameter silicon wafer, the precision requirement is nanometer level. The traditional method of wafer clamping is easy to damage the wafer and make the surface of the wafer scratch, which can not meet the new requirements gradually. According to the principle of negative pressure in the center of the vortex, this paper studies and designs the whirlpool sucker, which makes the wafer suspended in the air. Avoid damage to the surface of silicon wafer. Compared with other clamping methods, this kind of clamping method makes the stress distribution on the surface of silicon wafer uniform, and can avoid the damage to the surface of wafer to the maximum extent. Because of the instability of swirl, The single whirlpool sucker can not realize the normal gripping function. By the introduction of the integrated sucker, the stable clamping of the silicon wafer is realized, and this kind of integrated sucker is very suitable for the gripping of the large diameter silicon wafer. The automatic gripping and conveying of silicon wafer is realized by PLC programming. The main work is as follows:. 1. By using the theory of hydrodynamics, the theoretical analysis of the actual vortex produced by ideal vortex and sucker is carried out, and the parameters that may affect the gripping function of silicon wafer are analyzed. The structural parameters include the air cavity radius of the sucker and the height of the gas chamber. The shape and size of the inlet orifice and its location from the upper surface of the gas chamber, and the external parameters, such as inlet air pressure and flow rate, etc., are predicted to predict their possible influence on the silicon wafer. 2. The pressure distribution on the silicon wafer surface is measured by pressure sensor, and the clamping force is measured by the electronic weighing sensor. The influence of various parameters on the clamping force when the vortex sucker is working is analyzed, such as the clamping force depends on the radius of the gas chamber and the height of the gas chamber. The pressure distribution on the surface of silicon wafer was measured by selecting the best experimental parameters. 3. Through theoretical and experimental analysis, the single vortex sucker can not eliminate the torque, but only weaken its influence. For this reason, some special structure whirlpool suckers are designed. 4. On the basis of a lot of experimental research on single vortex sucker, the integrated combination of single sucker is carried out to eliminate the phenomenon of silicon wafer torsion, flip and oscillation, but the phenomenon of translation still exists, so an automatic stopper mechanism controlled by pneumatic method is designed. The translation phenomenon is eliminated and the stable clamping is realized. 5. Pneumatic transmission mode is adopted to realize the automatic gripping and conveying of silicon wafer by PLC programming.
【学位授予单位】:浙江大学
【学位级别】:硕士
【学位授予年份】:2012
【分类号】:TN405;TH22
【参考文献】
相关期刊论文 前5条
1 孙禹辉,康仁科,郭东明,金洙吉,苏建修;化学机械抛光中的硅片夹持技术[J];半导体技术;2004年04期
2 康仁科,田业冰,郭东明,金洙吉;大直径硅片超精密磨削技术的研究与应用现状[J];金刚石与磨料磨具工程;2003年04期
3 廖建勇;;硅片精密加工技术发展概述[J];科技风;2008年20期
4 马春;世界半导体硅材料发展现状[J];上海有色金属;2005年03期
5 李雪梅,曾德怀,丁峰;真空吸盘的设计与应用[J];液压与气动;2004年03期
相关博士学位论文 前1条
1 魏岗;分层流体中运动潜体生成的内波以及内波的垂向结构研究[D];上海大学;2004年
,本文编号:1567867
本文链接:https://www.wllwen.com/kejilunwen/jixiegongcheng/1567867.html