超宽带自动增益控制芯片设计

发布时间：2018-04-23 11:13

本文选题：自动增益控制 + 环路建立　；参考：《电子科技大学》2014年硕士论文

【摘要】：随着半导体工艺技术不断进步,射频集成电路的集成度和载波频率在不断向上推进。集成度升高可以在同样面积集成更多功能,而载波频率的上升可以允许更大带宽的信号传输,并且更高的工作频率具有一些特性方便物体探测和成像。在高频无线传输中,由于其本身的物理特性,信号在空气中衰减厉害并且不稳定,接受机不容易正确量化,自动增益控制放大器可以弥补这个问题。不过,高增益和大信号带宽的双要求使电路设计十分困难。现代CMOS工艺尺寸在减小,虽然特征频率持续提高,可是晶体管的本征增益却在不断下降,这方面不利于设计高增益放大器。Bi-CMOS工艺结合了Bipolar和CMOS的优势,利于高增益宽带射频集成电路设计。近些年,基于锗硅的Bi-CMOS工艺更是得到广泛应用。本文主要研究了高速无线传输背景下,特别是高载波超宽带信号传输中的自动增益控制放大器设计。由于主信号通路采用三极管,它的增益对温度比较敏感,并且环路各处的延时影响着增益控制的建立时间,分析较为复杂。针对以上问题,本文提出了一些解决办法。本文通过行为级建模,保证了环路的稳定性和快速建立,增加温度和共模反馈使芯片适应更大温度范围和电源电压波动以及工艺偏差,并利用0.13μm SiGe Bi-CMOS工艺设计了一个工作在2.5V电源电压下,带宽20GHz,最高增益40dB,增益动态范围60dB的自动增益控制放大器。后仿真显示芯片建立时间小于0.4μs,初步证实了本设计的有效性,最后本设计流片并进行实际验证。
[Abstract]:With the development of semiconductor technology, the integration and carrier frequency of RF integrated circuits are advancing continuously. Higher integration can integrate more functions in the same area, while the rise of carrier frequency allows for more bandwidth signal transmission, and the higher operating frequency has some characteristics to facilitate object detection and imaging. In high frequency wireless transmission, due to its own physical characteristics, the signal in the air attenuation and instability, the receiver is not easy to quantify correctly, the automatic gain control amplifier can make up for this problem. However, the dual requirements of high gain and large signal bandwidth make the circuit design very difficult. Although the characteristic frequency of modern CMOS process is decreasing, the intrinsic gain of transistor is decreasing, which is unfavorable to the design of high gain amplifier. Bi-CMOS process combines the advantages of Bipolar and CMOS. High gain broadband RF IC design. In recent years, the Bi-CMOS process based on germanium and silicon has been widely used. In this paper, the design of AGA in high speed wireless transmission, especially in high carrier UWB signal transmission is studied. Because the main signal path adopts Triode, its gain is sensitive to temperature, and the time delay in each part of the loop affects the time of establishing gain control, so the analysis is more complicated. In view of the above problems, this paper puts forward some solutions. In this paper, the stability and fast establishment of the loop are guaranteed by behavioral modeling, and the temperature and common-mode feedback are increased to make the chip adapt to the larger temperature range, the voltage fluctuation of the power supply and the process deviation. Using 0.13 渭 m SiGe Bi-CMOS process, an automatic gain control amplifier working at 2.5 V supply voltage with a bandwidth of 20 GHz, a maximum gain of 40 dB and a dynamic gain range of 60dB is designed. The establishment time of the post-simulation display chip is less than 0.4 渭 s, which preliminarily proves the effectiveness of the design. Finally, the flow chip is designed and verified in practice.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TN722;TN925

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