TFT-LCD制程中Sand Mura的失效模式分析及改善研究

发布时间：2018-05-16 13:09

  本文选题：TFT-LCD + Sand　； 参考：《液晶与显示》2015年02期

【摘要】：在薄膜晶体管液晶显示器件(TFT-LCD)的制作过程中,Mura是一种常见的不良现象,它可以直接影响到产品的画面品质。本文结合生产工艺的实际情况,采用宏观微观检查设备Macro/Micro(M/M)、扫描电子显微镜(SEM)、聚焦离子束测试仪(FIB)等设备进行检测分析,研究了产品开发过程中出现的Sand Mura问题。实验结果表明,Sand Mura发生的主要原因是像素电极ITO在刻蚀过程中由于过刻发生断裂,导致在通电时该处液晶分子偏转发生异常,进而阻挡了光的透过而形成暗点;通过变更ITO薄膜的厚度及刻蚀时间等一系列措施,防止了像素电极在PVX过孔处因过刻引起的断裂,不良发生率降至0.3%,产品质量得到了很大的提高。此外,过孔设计优化方案有助于新产品开发阶段避免该不良的发生,为以后相关问题的研究奠定了一些理论基础。
[Abstract]:Mura is a common bad phenomenon in the fabrication of thin film transistor liquid crystal display (TFT-LCD). It can directly affect the picture quality of the product. In this paper, according to the actual conditions of the production process, the Sand Mura problems in the product development process are studied by means of macroscopical and microscopical inspection equipment Macro-Micromicro M / M, scanning electron microscope (SEM), focused ion beam tester (FIB) and so on. The experimental results show that the main reason for the occurrence of Sand Mura is that the ITO of the pixel electrode breaks during the etching process, which leads to the abnormal deflection of liquid crystal molecules when the electricity is switched on, thus blocking the transmission of light and forming dark spots. By changing the thickness and etching time of ITO film, a series of measures were taken to prevent the breakage caused by over-etching of the pixel electrode in the PVX hole, and the bad rate was reduced to 0.3%, and the product quality was greatly improved. In addition, the optimization scheme of perforation design is helpful to avoid this bad situation in the stage of new product development, which lays some theoretical foundation for the research of related problems in the future.
【作者单位】： 合肥京东方光电科技有限公司;
【分类号】：TN873.93
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本文编号：1896929