宽带微带线过渡结构的研究与设计
发布时间：2018-08-07 18:36
【摘要】：本论文针对微波/毫米波系统中常见的微带线-微带线垂直过渡结构,微带线-共面波导过渡结构,微带线-共面带状线过渡结构进行了理论分析和创新研究。为了增加带宽和获得良好的阻抗匹配特性,在微带线-微带线垂直过渡的设计中,我们采用了微带线-槽线过渡形式,主要选用了低阻抗开路微带线支节和阶梯阻抗短路槽线支节。为了获得宽带传输性能,在微带线-共面波导过渡结构的设计中,我们采用了微带线与共面波导间的电磁耦合形式,并且引入了高特性阻抗的微带短路支节并联在微带线上。为了实现微带线-共面带状线的过渡结构的宽带、小型化设计,我们将微带线和共面带状线位于介质基片的两侧并且采用微带线与共面带状线的磁耦合的设计方案,该方案避免了微带线和共面带状线位于同层而需要的场匹配段及阻抗匹配段。 通过对以上三类过渡结构的理论分析并有效结合三维电磁场仿真软件(HFSS)进行仿真,我们对所提出的新型过渡结构进行了理论验证,并且分别对微带线-微带线垂直过渡结构和微带线-共面波导过渡结构进行了加工和测试。对于微带线-微带线垂直过渡结构,仿真和测试结果都表明,-10dB回波损耗的带宽为2.3-14GHz(143%),通带内插损小于2dB。对于微带线-共面波导过渡结构,仿真和测试结果都表明,-10dB回波损耗的带宽为2.6-12.2GHz(129%),通带内插损小于1.7dB。对于微带线-共面带状线过渡结构,仿真结果表明-10dB回波损耗的带宽为5.5-18.3GHz(107%),通带内的插损小于3dB。结果表明,本文所提出的三类过渡结构都有宽带宽,低插损,结构紧凑的特点,这些过渡结构在微波集成电路中如单片微波集成电路(MMIC)中具有良好的工程应用价值。
[Abstract]:In this paper, the vertical transition structure of microstrip line-microstrip line, the transition structure of microstrip line-coplanar waveguide and the transition structure of microstrip line-coplanar strip line in microwave / millimeter wave system are studied theoretically and innovatively. In order to increase the bandwidth and obtain good impedance matching characteristics, in the design of vertical transition of microstrip line-microstrip line, we adopt the form of microstrip line-slot line transition. Low impedance open-circuit microstrip branch and step impedance short-circuit slot branch are selected. In order to obtain wideband transmission performance, the electromagnetic coupling between microstrip line and coplanar waveguide is adopted in the design of microstrip line-coplanar waveguide transition structure, and the microstrip short-circuit branch with high characteristic impedance is introduced in parallel to microstrip line. In order to realize the wideband and miniaturization design of the transition structure of microstrip line and coplanar strip line, we put the microstrip line and coplanar strip line on both sides of the dielectric substrate and adopt the design scheme of magnetic coupling between the microstrip line and the coplanar strip line. This scheme avoids the field matching and impedance matching of microstrip line and coplanar strip line in the same layer. Through the theoretical analysis of the three types of transition structures mentioned above and the simulation of the three dimensional electromagnetic field simulation software (HFSS), we have theoretically verified the proposed new transition structures. The vertical transition structure of microstrip line-microstrip line and the transition structure of microstrip line-coplanar waveguide were fabricated and tested respectively. For the vertical transition structure between microstrip line and microstrip line, the simulation and test results show that the bandwidth of echo loss is 2.3-14GHz (14.3%), and the band insertion loss is less than 2 dB. For the microstrip wire-coplanar waveguide transition structure, the simulation and test results show that the bandwidth of echo loss is 2.6-12.2GHz (129%), and the band insertion loss is less than 1.7 dB. The simulation results show that the bandwidth of -10dB echo loss is 5.5-18.3GHz (107%) and the insertion loss in passband is less than 3 dB. The results show that the three types of transition structures proposed in this paper have the characteristics of wide bandwidth, low insertion loss and compact structure. These transition structures have good engineering application value in microwave integrated circuits such as monolithic microwave integrated circuits (MMIC).
【学位授予单位】：南京理工大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TN817
本文编号：2170972
[Abstract]:In this paper, the vertical transition structure of microstrip line-microstrip line, the transition structure of microstrip line-coplanar waveguide and the transition structure of microstrip line-coplanar strip line in microwave / millimeter wave system are studied theoretically and innovatively. In order to increase the bandwidth and obtain good impedance matching characteristics, in the design of vertical transition of microstrip line-microstrip line, we adopt the form of microstrip line-slot line transition. Low impedance open-circuit microstrip branch and step impedance short-circuit slot branch are selected. In order to obtain wideband transmission performance, the electromagnetic coupling between microstrip line and coplanar waveguide is adopted in the design of microstrip line-coplanar waveguide transition structure, and the microstrip short-circuit branch with high characteristic impedance is introduced in parallel to microstrip line. In order to realize the wideband and miniaturization design of the transition structure of microstrip line and coplanar strip line, we put the microstrip line and coplanar strip line on both sides of the dielectric substrate and adopt the design scheme of magnetic coupling between the microstrip line and the coplanar strip line. This scheme avoids the field matching and impedance matching of microstrip line and coplanar strip line in the same layer. Through the theoretical analysis of the three types of transition structures mentioned above and the simulation of the three dimensional electromagnetic field simulation software (HFSS), we have theoretically verified the proposed new transition structures. The vertical transition structure of microstrip line-microstrip line and the transition structure of microstrip line-coplanar waveguide were fabricated and tested respectively. For the vertical transition structure between microstrip line and microstrip line, the simulation and test results show that the bandwidth of echo loss is 2.3-14GHz (14.3%), and the band insertion loss is less than 2 dB. For the microstrip wire-coplanar waveguide transition structure, the simulation and test results show that the bandwidth of echo loss is 2.6-12.2GHz (129%), and the band insertion loss is less than 1.7 dB. The simulation results show that the bandwidth of -10dB echo loss is 5.5-18.3GHz (107%) and the insertion loss in passband is less than 3 dB. The results show that the three types of transition structures proposed in this paper have the characteristics of wide bandwidth, low insertion loss and compact structure. These transition structures have good engineering application value in microwave integrated circuits such as monolithic microwave integrated circuits (MMIC).
【学位授予单位】：南京理工大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TN817
【参考文献】
相关期刊论文 前2条
1 费元春，陈世伟;微波单片集成电路及其发展趋势[J];北京理工大学学报;1996年03期
2 顾墨琳,林守远;微波集成电路技术—回顾与展望[J];微波学报;2000年03期
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