高Q平面集成光波导谐振腔

发布时间：2017-12-31 04:27

本文关键词：高Q平面集成光波导谐振腔　出处：《微纳电子技术》2017年05期 　论文类型：期刊论文

【摘要】：提出了一种高品质因数的氧化硅平面集成光波导谐振腔的设计与加工方案。利用Matlab与BeamPROP软件对回音壁模式(WGM)谐振腔结构模型进行了仿真分析,深入讨论了耦合状态、腔长与谐振腔品质因数的关系。设计了直径6 cm的环形光波导谐振腔,直波导与环形腔的耦合率为3.3%。整个谐振腔耦合结构被设计为欠耦合状态来优化其品质因数。在此基础上,在硅衬底上采用等离子体增强化学气相沉积(PECVD)技术和紫外光刻技术制作出二氧化硅光波导谐振腔芯片,芯片尺寸为7 cm×7 cm。利用一个波长为1 550 nm可调谐激光器对谐振腔的光谱进行了测试,测试结果表明所加工出的氧化硅光波导谐振腔的品质因数高达4.3×107。
[Abstract]:A design and fabrication scheme of a high quality silicon oxide planar integrated optical waveguide resonator is presented. The echo wall mode is fabricated by Matlab and BeamPROP software. The resonator structure model is simulated and analyzed. The relationship between the coupling state, the cavity length and the quality factor of the resonator is discussed, and the ring optical waveguide resonator with a diameter of 6 cm is designed. The coupling rate between the straight waveguide and the ring resonator is 3.3. The whole resonator coupling structure is designed as an undercoupling state to optimize its quality factor. A silicon dioxide optical waveguide resonator chip was fabricated by plasma enhanced chemical vapor deposition (PECVD) and UV lithography on silicon substrate. The size of the chip is 7 cm 脳 7 cm. The spectrum of the resonator is measured by a wavelength tunable laser of 1 550 nm. The test results show that the quality factor of the fabricated silicon oxide waveguide resonator is as high as 4.3 脳 107.
【作者单位】：中北大学仪器科学与动态测试教育部重点实验室;
【基金】：国家自然科学基金资助项目(51225504,61571406,51635011)
【分类号】：TN252
【正文快照】： 0引言回音壁模式(whispering-gallery mode,WGM)光学谐振腔利用光在介质表面的全反射特性,具有高品质因数、小体积与易集成等优点,近年来在光通信[1]、光电异质集成[2]与高灵敏度光学传感[3]等领域受到了广泛关注。目前,研究人员已研制出基于回音壁模式谐振腔的滤波器、光学调

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