真空热处理对硫化锌薄膜光学与微结构特性的影响
发布时间:2018-01-01 03:20
本文关键词:真空热处理对硫化锌薄膜光学与微结构特性的影响 出处:《光学精密工程》2017年08期 论文类型:期刊论文
更多相关文章: ZnS薄膜 折射率 消光系数 真空热处理 晶相结构
【摘要】:针对电子束蒸发离子辅助沉积的硫化锌薄膜,研究了550℃以下真空热处理对其光学与微结构特性的影响。薄膜光学和微结构特性的测试分析表明:制备后薄膜为类立方结构的ZnS,在337.5nm波长处出现临界特性转折点,随着热处理温度的增加,转折波长两侧的消光系数变化规律相反,折射率和物理厚度呈现下降趋势,薄膜的禁带宽度逐渐增加;在红外波段的薄膜折射率与热处理温度的变化并不显著,在350℃下热处理时消光系数出现转折,主要是由晶粒变小的趋势所致;通过晶相分析,硫化锌薄膜经历了类立方结构到六方结构的转换,与禁带宽度的变化趋势基本一致。分析结果表明,光学特性变化的根本原因是薄膜的微结构特性变化。
[Abstract]:The ZnS thin films by electron beam evaporation and ion assisted deposition, studied 550 DEG C effects of vacuum heat treatment on the microstructure and optical properties of the films. The optical and microstructural properties of the test showed that: after the preparation of film type cubic structure ZnS at the wavelength of 337.5nm is the critical turning point with the characteristics. The heat treatment temperature increases, the extinction coefficient of variation of wavelength on both sides of the turning point on the contrary, the decline of refractive index and physical thickness, band gap of films increase gradually; no significant changes in the refractive index of thin film infrared and heat treatment temperature, heat treatment at 350 DEG C when the extinction coefficient of a turning point, is mainly composed of grain decreases caused by phase analysis; crystal zinc sulfide thin film has a cubic structure to the conversion of the six party class structure, change trend and band width are basically the same. The analysis results show that the optical characteristics The fundamental reason for the change of sex is the change in the microstructure of the film.
【作者单位】: 中国航天科工飞航技术研究院天津津航技术物理研究所天津市薄膜光学重点实验室;哈尔滨工业大学光电子技术研究所可调谐激光技术国防科技重点实验室;
【基金】:国家自然科学基金资助项目(No.61405145) 天津市自然科学重点基金资助项目(No.15JCZDJC31900) 中国博士后科学基金资助项目(No.2015T80115,No.2014M560104)
【分类号】:O484.41
【正文快照】: 2.哈尔滨工业大学光电子技术研究所可调谐激光技术国防科技重点实验室,黑龙江哈尔滨150001)(1.Tianjin Key Laboratory of Optical Thin Film,Tianjin Jinhang Technical PhysicsInstitute,HIWING Technology Academy of CASIC,Tianjin300308,China;2.National Key Laboratory
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