EtherCAT设备端口电磁脉冲损伤阈值及防护措施

发布时间：2018-01-01 06:16

本文关键词：EtherCAT设备端口电磁脉冲损伤阈值及防护措施　出处：《高电压技术》2017年04期 　论文类型：期刊论文

【摘要】：为了实现高空核电磁脉冲(HEMP)的有效防护,选取一款典型的以太网现场总线系统(EtherCAT)从站通信模块,对其进行HEMP传导注入试验。研究了该类装置对HEMP的敏感度及损伤累积效应影响,选取了适用于网络端口的防护器件,研究了其对HEMP的响应特性,并提出了端口防护方案。通过试验得出:被测端口对HEMP传导注入较为敏感,单次脉冲注入情况下的损毁阈值电压约为450.1V,10次脉冲注入情况下的损毁阈值电压约为273.5 V,脉冲次数对其具有明显的累积效应;该防护器件在单次脉冲注入时损毁阈值电压为9.67 k V,10次脉冲时的损毁阈值电压为8.97 kV;将该防护器件并联至受试模块注入端口后,受试端口可保证在注入3 kV HEMP电压峰值下网络系统仍不受损伤。研究结果表明,防护后的以太网从站通信模块的损毁阈值电压可提升至3 kV以上。
[Abstract]:In order to realize the effective protection of high altitude nuclear electromagnetic pulse (HEMP), a typical Ethernet fieldbus system (Ethernet bus) slave communication module is selected. The sensitivity of the device to HEMP and the damage accumulation effect are studied. The protective devices suitable for the network port are selected. The response to HEMP is studied, and a port protection scheme is proposed. The test results show that the tested port is sensitive to HEMP conduction injection. The damage threshold voltage of single pulse injection is about 450.1 V ~ (-1) and the damage threshold voltage of 10 pulse injection is about 273.5 V, and the number of pulses has a significant cumulative effect on the damage threshold voltage. The damage threshold voltage of the device is 8.97 kV when the damage threshold voltage is 9.67 kV / 10 pulses. When the protective device is connected to the port of the tested module, the test port can ensure that the network system will not be damaged when the peak voltage of 3 kV HEMP is injected. The damaged threshold voltage of the protected Ethernet slave communication module can be raised to above 3 kV.
【作者单位】：解放军理工大学电磁环境效应与光电工程国家级重点实验室;西安爱邦电磁技术有限责任公司;
【基金】：国家自然科学基金(51407198) 军用特种电源重点实验室开放课题(MSPS2013 03)~~
【分类号】：O441;TP273
【正文快照】： 0引言1高空核电磁脉冲(HEMP)具有频谱宽、覆盖范围广、峰值场强高等特点,对大系统中的分布网络会产生严重的毁伤效应。国际电工委员会(IEC)已将对HEMP的防护列入重要基础设施的防护要求并行成相关国际标准[1]。由于不同设备及不同端口的敏感性不同,防护要求和措施也不同,所以

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