808nm半导体激光芯片电光转换效率的温度特性机理研究

发布时间：2018-01-14 12:31

本文关键词：808nm半导体激光芯片电光转换效率的温度特性机理研究　出处：《物理学报》2017年10期 　论文类型：期刊论文

【摘要】：提高808 nm大功率半导体激光器电光转换效率具有重要的学术意义和商业价值,是实现器件小型化、轻量化、高可靠性的必要前提.本文以腔长1.5 mm的传导冷却封装808 nm半导体激光阵列为研究对象,在热沉温度-40—25?C范围内对其进行光电特性测试,对不同温度下电光转换效率的影响因子进行了实验研究和理论分析.结果表明:在-40?C环境温度下,最高电光转换效率从室温25?C时的56.7%提高至66.8%,内量子效率高达96.3%,载流子泄漏损耗的占比贡献由16.6%下降至3.1%.该研究对实现808 nm高效率半导体激光芯片的自主研发具有重要意义.
[Abstract]:Improving the electro-optic conversion efficiency of 808 nm high power semiconductor laser is of great academic significance and commercial value. It is a miniaturized and lightweight device. In this paper, 808 nm semiconductor laser array with 1.5 mm cavity length conduction cooling package is taken as the research object, and the heat sink temperature is -40-25? In the range of C, the optoelectronic properties were tested, and the influence factors of electro-optic conversion efficiency at different temperatures were studied and theoretically analyzed. The results showed that: -40? At C ambient temperature, the maximum electro-optic conversion efficiency from room temperature to 25? The internal quantum efficiency is as high as 96.3% when 56.7% at C is increased to 66.8. The contribution of carrier leakage loss has been reduced from 16.6% to 3.1. This study is of great significance to the development of 808nm high efficiency semiconductor laser chip.
【作者单位】：中国科学院西安光学精密机械研究所瞬态光学与光子技术国家重点实验室;中国科学院大学;西安立芯光电科技有限公司;
【基金】：国家自然科学基金(批准号:61504167) 中国科学院百人计划(批准号:Y429941233)资助的课题~~
【分类号】：TN248.4
【正文快照】： 808 nm传导冷却型封装半导体激光器阵列,填1引言充因子24%,在15?C工作温度条件下,输出功率达到55 W,最高电光转换效率71.5%[7],这是目高功率半导体激光器具有体积小、重量轻、效前国际上报道的最高水平;2008年,FBH报道了率高、寿命长等优点,在工业加工[1]、医疗美容[2]、808 n

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