光学元件激光诱导损伤分析及实验研究

发布时间：2018-01-16 05:27

本文关键词：光学元件激光诱导损伤分析及实验研究　出处：《中国激光》2017年03期 　论文类型：期刊论文

【摘要】：通过激光损伤实验,系统分析了传统研磨抛光加工工艺中表面杂质、刻蚀时间、亚表层缺陷和划痕宽深比对熔石英元件激光损伤阈值的影响。结果表明:擦洗后熔石英元件的激光损伤阈值为21.6J/cm~2,未经擦洗的元件的激光损伤阈值为11.28J/cm~2,受表层杂质影响激光损伤阈值大幅度降低,而有缺陷位置处的激光损伤阈值明显比无缺陷位置处的低。刻蚀时间的增加会使工件表面粗糙度和缺陷尺寸逐渐增大,导致光学元件激光损伤阈值大幅度下降,因此需要合理选择化学刻蚀时间。亚表层缺陷会对入射光场产生调制作用,造成局部区域反射光、散射光及入射光相互叠加,最终导致材料破坏而产生激光损伤。随着刻蚀时间的增加,划痕的宽深比会逐渐增大,可以逐渐减弱划痕对光场的调制作用,从而降低激光损伤发生的概率。
[Abstract]:The surface impurity and etching time in the traditional grinding and polishing process were systematically analyzed by laser damage experiment. The results show that the laser damage threshold of fused quartz element is 21.6J / cm ~ 2 after scrubbing. The laser damage threshold of unscrubbed elements is 11.28 J / cm ~ (-2), which is greatly reduced by surface impurity. The laser damage threshold at the defect position is obviously lower than that at the non-defect position. The surface roughness and defect size will increase gradually with the increase of etching time, and the laser damage threshold of optical elements will be greatly reduced. Therefore, it is necessary to choose the reasonable etching time. The subsurface defects will modulate the incident light field, resulting in the local area reflected light, scattered light and incident light superposition each other. With the increase of etching time, the ratio of width to depth of scratch will gradually increase, which can gradually weaken the modulation effect of scratch on light field, thus reducing the probability of laser damage.
【作者单位】：哈尔滨工业大学机电工程学院;
【基金】：国家自然科学基金(51475106,51475119) 国防基础科研科学挑战专题(JCKY2016212A506-0503)
【分类号】：TN249
【正文快照】： 熔石英是SiO2的一种非晶体形态,具有非常理想的光学性能,广泛应用于基频和三倍频波段[1]。但在熔石英切割、研磨、抛光和清洗过程中,不可避免地会在工件表面/亚表面区域产生各种缺陷和杂质,这些扩展到表面以下深度几微米甚至几百微米的缺陷和杂质大大降低了高功率固体激光装置

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