GaAs基大功率激光器静电失效现象的研究

发布时间：2018-01-19 18:38

  本文关键词： 大功率半导体激光器 静电 I-V特性 光输出功率　出处：《激光与红外》2017年06期 　论文类型：期刊论文

【摘要】：为了判别大功率半导体激光器是否为静电损毁失效,对大功率半导体激光器进行了静电损毁机制的研究。通过测量和表征大功率半导体激光器静电损毁现象,为判别其失效提供有效判据。首先,对GaAs基980 nm大功率半导体激光器(HPLD)分别施加了-200 V,-600 V,-800 V,-1200 V以及+5000 V的静电打击(ESD),每次打击后,测量样品电学参数和光学参数。其次,对打击后的器件进行腐蚀并显微观察其打击后损伤现象。反相ESD后,半导体激光器I-V曲线有明显的软击穿现象,在反向4 V电压下反向1200 V静电打击后漏电为打击的5883854.92倍。正向5000 V静电打击后器件没有明显的软击穿现象,且功率下降很小。在反向ESD后器件腐蚀金电极后表面有明显熔毁现象,正向静电打击后则没有此现象。通过正向静电打击和反向静电打击下器件反应的不同I-V特性和损伤表征,推测正向瞬时大电压大电流下,器件的I-V特性无明显变化,而反向大电压大电流打击会导致I-V曲线出现明显软击穿,功率下降和表面熔毁现象,为判别静电损毁提出了有效判据。
[Abstract]:In order to determine whether the high power semiconductor laser is electrostatic damage failure, the electrostatic damage mechanism of high power semiconductor laser is studied. The electrostatic damage phenomenon of high power semiconductor laser is measured and characterized. In order to provide an effective criterion for judging its failure, first of all, the GaAs based 980nm high power semiconductor laser has been applied -200V ~ 600V ~ (-1) V ~ (-800V), respectively. After each strike, the electrical and optical parameters of the sample were measured. The device after striking was corroded and the damage phenomenon was observed microscopically. After reverse-phase ESD, the I-V curve of semiconductor laser has obvious soft breakdown phenomenon. The leakage is 5883854.92 times as high as that after the negative 1200V electrostatic strike at the reverse 4V voltage. There is no obvious soft breakdown phenomenon after the forward 5000V electrostatic strike. And the power drop is very small. The surface of the device corrodes the gold electrode after the reverse ESD has obvious melting phenomenon. There is no such phenomenon after forward electrostatic strike. Through the different I-V characteristics and damage characterization of the device reaction under forward electrostatic strike and reverse electrostatic strike, it is inferred that under the high voltage and high current in the forward instantaneous. The I-V characteristic of the device has no obvious change, but the reverse high voltage and large current strike will lead to the obvious soft breakdown of I-V curve, the power drop and the surface melting phenomenon, which provides an effective criterion for distinguishing the electrostatic damage.
【作者单位】： 北京工业大学光电子实验室;
【基金】：国家自然科学基金项目(No.11204009) 北京市自然科学基金项目(No.4142005) 北京市教委能力提升项目(No.PXM2016_014204_500026)资助
【分类号】：TN248.4
【正文快照】： 1引言由于大功率半导体激光器(HPLD)具有电光转化效率高、器件尺寸小和单色性好等优点,其应用范围也在不断扩大。在光学通信、固态激光器泵浦源、医学、工业生产和3D激光打印等领域,大功率半导体激光器都有广泛应用[1]。随着应用领域的不断扩展,人们对HPLD可靠性的要求也越来，

本文编号：1445068