低阈值852nm半导体激光器的温度特性

发布时间：2018-02-03 13:17

本文关键词： nm半导体激光器温度特性阈值电流特征温度　出处：《发光学报》2017年03期 　论文类型：期刊论文

【摘要】：通过金属有机化学气相淀积(MOCVD)和半导体后工艺技术制备了852 nm半导体激光器,它在室温下的阈值电流为57.5 m A,输出的光谱线宽小于1 nm。测试分析了激光器的输出光功率、阈值电流、电压、输出中心波长随温度的变化。测试结果表明,当温度变化范围为293~328 K时,阈值电流的变化速率为0.447m A/K,特征温度T0为142.25 K,输出的光功率变化率为0.63 m W/K。通过计算求得理想因子n为2.11,激光器热阻为77.7 K/W,中心波长漂移速率是0.249 29 nm/K,实验得出的中心波长漂移速率与理论计算结果相符。实验结果表明,该半导体器件在293~303 K的温度范围内,各特性参数能够保持相对良好的状态。器件如果工作在高温环境,需要添加控温设备以保证器件在良好状态下运行。
[Abstract]:A 852nm semiconductor laser was fabricated by metal-organic chemical vapor deposition (MOCVD) and post-semiconductor technology. Its threshold current at room temperature is 57.5 Ma. The output spectral linewidth is less than 1 nm. The variation of output power, threshold current, voltage and output center wavelength with temperature is analyzed. When the temperature range is 293 ~ 328K, the change rate of threshold current is 0.447mA / Kand the characteristic temperature T0 is 142.25K. The output optical power change rate is 0.63 MW / K. The ideal factor n is 2.11 and the thermal resistance of the laser is 77.7 K / W. The central wavelength drift rate is 0.249 29 nm / kg. The experimental results agree with the theoretical results. The semiconductor device is in a temperature range of 293 ~ 303K and each characteristic parameter can be maintained in a relatively good state if the device operates in a high temperature environment. Temperature control devices need to be added to ensure that the devices operate in good condition.
【作者单位】：北京工业大学光电子技术教育部重点实验室;
【基金】：半导体激光器产业化技术基金(YXBGD20151JL01) 国家自然科学基金(61575008,60908012,61376049,61076044,61107026,61204011) 北京市自然科学基金(4132006,4102003,4112006) 北京市教育委员会基础技术研究基金(KM201210005004)资助项目~~
【分类号】：TN248.4
【正文快照】： Supported by Semiconductor Laser Industrialization Technology Fund(YXBGD20151JL01);National Natural Science Foundationof China(61575008,60908012,61376049,61076044,61107026,61204011);National Natural Science Foundation of Beijingcity(4132006,4102003,41120

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