低压热丝化学气相沉积法快速合成1-2层石墨烯薄膜

发布时间：2018-03-10 02:27

  本文选题：石墨烯　切入点：低压热丝化学气相沉积　出处：《西北大学学报(自然科学版)》2017年02期 　论文类型：期刊论文

【摘要】：利用镍衬底独特的渗碳-析碳机制,分别引入混合气体氢气和乙炔,使用低压热丝化学气相沉积法(LPHFCVD),在镍衬底上生长石墨烯(Graphene)薄膜。通气时长分别为5s,60s,300s,极大地节省了时间和成本。制备的样品分别通过拉曼光谱(Raman),X光电子能谱(XPS),扫描电镜(SEM)等分析表征手段对其结构、形貌、缺陷等进行表征。拉曼光谱表明石墨烯薄膜的D,G,2D峰在不同温度、不同反应时间条件下不同的层数、缺陷密度和结晶质量,其中以950℃,5s的条件制备得到的石墨烯薄膜为1-2层,且缺陷极少,结晶质量很高。XPS的结果进一步确认了按照以上条件制备的石墨烯薄膜具有很高的结晶质量和很低的缺陷密度。SEM则显示了在镍衬底上制备石墨烯薄膜的形貌。
[Abstract]:Based on the unique Carburizing and carbon evolution mechanism of nickel substrate, the mixed gases of hydrogen and acetylene were introduced, respectively. Graphene Graphene thin films were grown on nickel substrates by low pressure hot filament chemical vapor deposition (LPHFCVDX). The aeration time was 5 sg 60 sg 300s, which greatly saved the time and cost. The samples were scanned by Raman spectra and X-ray photoelectron spectroscopy (XPS). Electron microscope (SEM) and other means of analysis and characterization of its structure, Raman spectra showed that the DG ~ (2 +) peak of graphene thin films had different layers, defect density and crystallization quality at different temperatures and different reaction times. The graphene film prepared at 950 鈩，

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