基于选区外延技术的单片集成阵列波导光栅与单载流子探测器的端对接设计

发布时间：2018-03-18 22:13

本文选题：单片集成　切入点：阵列波导光栅　出处：《物理学报》2017年15期 　论文类型：期刊论文

【摘要】：选区外延技术是实现有源与无源光器件单片集成的一种有效的工艺手段,但同时对两种器件在异质生长界面处的对接结构提出了更高的设计要求.本文通过选区外延技术实现了InP基O波段4通道阵列波导光栅与单载流子探测器的单片集成.通过光学仿真重点研究了选区外延后界面处形貌对无源波导结构与有源光探测器间光耦合效率的影响,包括伸长的光学匹配层、二次外延生长边界位置、波导刻蚀边界位置等因素.研究结果表明,在保证二次外延生长边界对准异质对接界面时,将光学匹配层伸出探测器前端10μm并与外延边界无缝对接既可以保证高效的光传输效率(或探测器量子效率),又可以避免外延界面处的异常生长对器件制备工艺的影响,保证生长工艺与器件制备工艺的兼容性.成功制备的单片集成芯片具有高达76%的探测器量子效率,证明了对接方案的有效性.同时,集成芯片的低串扰(-22 dB)与解复用特性展示出其作为解复用光接收芯片具有巨大潜力.
[Abstract]:Selective epitaxy is an effective process for the integration of active and passive optical devices. But at the same time, higher design requirements are put forward for the docking structure of the two devices at the interface of heterogeneous growth. In this paper, InP based O-band 4-channel arrayed waveguide grating and single-carrier detector are realized by selective epitaxy technique. The influence of interface morphology on the optical coupling efficiency between the passive waveguide structure and the active optical detector is studied by optical simulation. These factors include elongated optical matched layer, secondary epitaxial growth boundary position, waveguide etching boundary position, etc. The results show that, when the secondary epitaxial growth boundary is aligned with the heterojunction interface, Extending the optical matching layer to the front end of the detector at 10 渭 m and seamlessly docking with the epitaxial boundary can not only guarantee the efficient optical transmission efficiency (or detector quantum efficiency], but also avoid the influence of abnormal growth at the epitaxial interface on the fabrication process of the device. To ensure the compatibility between the growth process and the device fabrication process. The successfully fabricated monolithic integrated chip has a detector quantum efficiency of up to 76%, which proves the effectiveness of the docking scheme. The low crosstalk (-22 dB) and demultiplexing characteristics of the integrated chip demonstrate its great potential as a demultiplexing optical receiver chip.
【作者单位】：中国科学院半导体研究所集成光电子学国家重点实验室;中国科学院大学电子电气与通信工程学院;中国科学院大学材料科学与光电技术学院;
【基金】：国家高技术研究发展计划(批准号:2015AA016902) 国家重点研发计划(批准号:2016YFB0402404) 国家自然科学基金(批准号:61635010,61674136,61435002)资助的课题~~
【分类号】：TN25

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