基于液滴锡靶LPP-EUVL光源多层膜的溅射损伤研究

发布时间：2018-03-19 23:20

  本文选题：激光等离子体　切入点：自相似膨胀　出处：《华中师范大学学报(自然科学版)》2017年02期 　论文类型：期刊论文

【摘要】：基于Navier-Stokes方程的自相似解,研究了最小质量限制液滴Sn靶激光等离子高能离子的时空分布特性,并将该结果应用于高能离子碎屑刻蚀导致的极紫外光刻(EUVL)光源收集镜寿命的评估.对于不同的绝热膨胀指数γ=1.67、1.3和1.1,数值计算了激光等离子体平均电离度、等离子体羽辉尺寸、羽辉膨胀速率和离子动能随时间的演化,并得到了高能Sn离子碎屑通量的角分布及其轰击溅射Ru、Mo和Si膜的溅射产额及溅射刻蚀速率.研究发现,激光液滴靶等离子体中的高能Sn离子对Mo,Si多层膜的溅射刻蚀率的角分布满足cos3θ的关系.对EUVL光源而言,为了延长EUV收集镜寿命,降低激光等离子体电离度和采用最小质量限制液滴Sn靶是一条有效的途径.
[Abstract]:Based on the self-similar solution of Navier-Stokes equation, the space-time distribution characteristics of laser plasma high-energy ions in the minimum mass limited liquid droplet Sn target are studied. The results are applied to the estimation of the lifetime of the very ultraviolet photoetching EUVLL light source caused by high energy ion chip etching. For different adiabatic thermal expansion exponents 纬 1. 67 1. 3 and 1. 1, the average ionization degree of laser plasma and the size of plasma plume are numerically calculated. The angular distribution of high-energy Sn ion clastic flux, the sputtering yield and the sputtering etching rate of Ru-Mo and Si films deposited by bombardment have been obtained, and it is found that the angular distribution of the angular flux and the sputtering etching rate of the high-energy Sn ion clastic flux have been obtained by the evolution of the plume expansion rate and ion kinetic energy with time. The angular distribution of the sputtering etching rate of Mo-Si multilayer films by high energy Sn ions in laser droplet target plasma conforms to the relationship of cos3 胃. For EUVL light source, in order to prolong the lifetime of EUV collecting mirror, It is an effective way to reduce the ionization degree of laser plasma and to adopt the minimum mass limited liquid droplet Sn target.
【作者单位】： 武汉工程大学理学院;
【基金】：国家自然科学基金项目(11304235) 武汉工程大学校长基金项目(2014067);武汉工程大学科学研究基金项目(K201310)
【分类号】：O539
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本文编号：1636489