SOI光开关阵列的基础研究

发布时间：2018-05-20 11:39

本文选题：SOI + 电光开关　；参考：《长春理工大学》2017年硕士论文

【摘要】：SOI(Silicon-On-Insulator)中文翻译成为绝缘体上的硅,其在半导体材料领域占有一半份额,因其在低压、高温、低功率电路、传感器及光电集成方面有着优良的性能,所以被称为“二十一世纪的硅基础电路技术”。同时,SOI材料的光开关具有与传统硅工艺相兼容、实现光电的集成,开关响应时间快,精湛的加工技术和造价低廉等优势,成为广泛应用的具有发展前景的半导体材料。因此,其不但可以制作精致紧凑灵敏的光电集成器件,也为在CMOS(Complementary Metal Oxide Semiconductor)微电子工艺上实现光电集成提供了一个优良的平台。本文拟以SOI光开关的设计与仿真作为自己的研究方向,重点研究了基于优化后的开关单元进行光开关阵列的建模与仿真。由于光开关在制备工艺上有着一定的困难与不成熟,所以本文主要利用光束传播法对耦合器、光开关以及大型光开关阵列进行优化设计,主要研究内容包括:(1)2×2 SOI光开关单元的优化设计与性能模拟,从MZI(Mach-Zehnder Interferometer)型光开关结构和原理出发,利用有限差分光束传播法优化设计的MZI干涉仪型光开关单元,并对其光路进行性能仿真。(2)2×2 SOI电光开关的研究,研究了SOI电光开关载流子色散效应及其特性。(3)在2×2光开关单元的优化设计和连接光路建模与仿真基础上,构建网络结构,仿真分析了4×4、8×8、16×16的MZI型SOI热光和电光开关阵列的性能。
[Abstract]:The SOI Silicon-On-Insulator translates into silicon on insulators, which has a half share in semiconductor materials because of its excellent performance in low-voltage, high-temperature, low-power circuits, sensors and optoelectronic integration. Therefore, it is called the basic circuit technology of silicon in the 21 century. At the same time, the optical switch of SOI material is compatible with the traditional silicon technology, realizes the photoelectric integration, the switch response time is fast, the consummate processing technology and the cost is low, so it has become a widely used semiconductor material with the prospect of development. Therefore, it can not only make compact and sensitive optoelectronic integrated devices, but also provide an excellent platform for the realization of optoelectronic integration in CMOS(Complementary Metal Oxide Semiconductor) microelectronics technology. In this paper, the design and simulation of SOI optical switch is taken as its own research direction, and the modeling and simulation of optical switch array based on the optimized switch cell is studied. Because the optical switch has some difficulties and immaturity in the fabrication process, this paper mainly uses the beam propagation method to optimize the design of coupler, optical switch and large optical switch array. The main research contents include the optimal design and performance simulation of the 2 脳 2 SOI optical switch unit. Based on the structure and principle of the MZI(Mach-Zehnder Interferometer optical switch, the MZI interferometer optical switch cell is optimized by using the finite difference beam propagation method. The performance of the optical circuit is simulated. The 2 脳 2 SOI electro-optic switch is studied. The carrier dispersion effect and its characteristics of the SOI electro-optic switch are studied. Based on the optimized design of the 2 脳 2 optical switch unit and the modeling and simulation of the connected optical path, the network structure is constructed. The performance of MZI SOI thermo-optical and electro-optic switch arrays with 4 脳 4 脳 4 脳 8 脳 8 脳 16 脳 16 is simulated and analyzed.
【学位授予单位】：长春理工大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN256;TN929.1

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