多模多标准接收机抗阻塞射频前端关键模块的设计

发布时间：2018-05-31 19:47

本文选题：宽带接收机 + 抗阻塞　；参考：《东南大学》2017年硕士论文

【摘要】：随着无线通信技术的发展,同时支持多种通信标准的宽带接收机已逐渐成为研究热点。不同于传统的窄带接收机,宽带接收机去除了片外滤波器,更易受到大信号的干扰,因此其抗阻塞性能至关重要。本文围绕宽带抗阻塞接收机射频前端展开研究,设计了宽带低噪声放大器(LNA)、无源混频器和分频器等电路模块。基于IBM 0.13μmSiGe BiCMOS工艺,本文设计了三款宽带低噪声放大器,并根据需要选择共基LNA作为低噪声放大器的最终结构。共基LNA提供两种增益选择,在高增益模式下具有较高的输出阻抗,以达到较大的阻塞抑制比,并采用电感峰化技术以提高带宽、降低噪声;在低增益模式下具有较高的线性度。本文结合单平衡和双平衡混频器的优点,设计了一个正交无源混频器,其在完成信号下变频的同时,与基带电容共同在LNA输出端形成高Q值射频带通滤波器,用于滤除阻塞信号。与此同时,本文设计了一个二分频器,为混频器提供25%占空比的非交叠本振信号。最后,本文针对混频器结构的特点,设计了具有高线性度的输出缓冲器,实现了输出匹配,便于测试。本文设计的射频前端供电电压为1.8V和2.7V,芯片面积为0.32mm~2,工作频率为0.92GHz～2.4GHz,高增益模式下的噪声系数小于3.75dB,在距离接收信号80MHz频偏处的阻塞抑制比达到16.5dB,当80MHz频偏处存在OdBm的阻塞信号时,射频前端的噪声系数为14.7dB,具有良好的抗阻塞性能。低增益模式下带外IIP3为-1.4dBm,带外P1dB为-1.7dBm。
[Abstract]:With the development of wireless communication technology, wideband receiver which supports various communication standards has become a research hotspot. Unlike traditional narrow-band receivers, wideband receivers remove out-of-chip filters and are more susceptible to large signal interference, so their anti-blocking performance is very important. In this paper, the RF front-end of the wideband anti-blocking receiver is studied, and the circuit modules of the broadband low-noise amplifier (LNA), passive mixer and divider are designed. Based on IBM 0.13 渭 mSiGe BiCMOS process, this paper designs three broadband low noise amplifiers, and selects the common base LNA as the final structure of the low noise amplifiers according to the need. Combining the advantages of single balance and double balance mixers, an orthogonal passive mixer is designed in this paper. When signal down-conversion is completed, a high Q RF band-pass filter is formed at the output of LNA with baseband capacitance at the same time. Used to filter blocking signals. At the same time, a two-divider is designed to provide 25% duty cycle non-overlapping local oscillator signal for mixer. Finally, an output buffer with high linearity is designed according to the characteristics of mixer structure, which realizes output matching and is easy to test. The designed RF front-end power supply voltage is 1.8V and 2.7V, the chip area is 0.32mmm2, the working frequency is 0.92GHz / 2.4GHz, the noise coefficient is less than 3.75dB in high gain mode, and the blocking suppression ratio is 16.5 dB at the distance from the received signal 80MHz frequency offset, when the 80MHz frequency offset exists. When the blocking signal of OdBm, The noise coefficient of RF front end is 14.7 dB, which has good anti-blocking performance. In low gain mode, the out-of-band IIP3 is -1.4 dBmand the out-of-band P1dB is -1.7 dBm.
【学位授予单位】：东南大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN851

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