基于QD-SOA的全光逻辑器件的研究
发布时间：2018-10-12 18:26
【摘要】：全光网络作为光纤通信的重要形式,可满足当前人们对于大数据传输的高标准要求。在全光网络的组成器件中,量子点半导体光放大器(QD-SOA)因有源区内包含量子点而表现出较快的增益恢复特性,被广泛应用到光放大及光转换中。除了波长转换器,基于QD-SOA可以构建全光逻辑门器件以及全光逻辑运算器件。根据调制方式不同,利用QD-SOA实现的全光逻辑器件主要分三种,采用交叉相位调制效应(XPM)的QD-SOA全光逻辑器件较其它调制方式的QD-SOA具有消光比大、啁啾小等特点。本文内容如下:1.根据QD-SOA的理论知识,建立QD-SOA的静态和动态模型,并分别采用牛顿迭代法和四阶龙格库塔法,得到载流子浓度变化和光场变化的规律,这是研究QD-SOA波长转换及逻辑器件的基础。2.研究了 QD-SOA-XPM的波长转换特性,分析基于XPM效应的同相反相转换以及相位变化特点。通过改变外加注入电流,可实现输出的反相转换,当I1、I2均为40mA时,转换波形为同相输出,当I1为40mA,I2为10mA时,转换波形为反相输出。此外由载流子浓度的变化规律分析相位的变化规律。3.基于QD-SOA-XPM效应模拟实现了逻辑或门,研究了注入电流、τw2、输入泵浦光功率、脉冲宽度、最大模式增益及有源区长度对逻辑或门性能的影响。通过仿真分析得到:当增大注入电流、减小τw2与最大模式增益时,都可以使Q因子和消光比提高,当增大泵浦光功率、脉冲宽度与有源区长度时,Q因子和消光比的变化趋势相反,因此要权衡两者选择合适的泵浦光功率、脉冲宽度及有源区长度。4.基于QD-SOA-XPM效应,采用逻辑异或门和逻辑与门的级联实现了全光半加器。研究了注入电流、τw2、脉冲宽度、最大模式增益及有源区长度对半加器性能的影响。通过仿真分析得到:减小τw2,降低脉冲宽度、减小最大模式增益,适当减小有源区长度都可以使对比度增大、码型效应减小,而对于外加注入电流,对比度和码型效应的变化规律相反,因此要适当选择参数。5.基于QD-SOA-XPM效应模拟实现了全光半减器,采用P01 / P11作为衡量半减器性能的参数,通过仿真分析外加注入电流、τw2、脉冲宽度、最大模式增益、有源区长度等参数对半减器性能的影响,得到半减器性能较好的输入参数。具体来讲,当注入电流为50mA,τw2为2ps,脉冲宽度为0.5ps,最大模式增益为1800m-1,有源区长度为1.8mm时,全光半减器的性能有改善。
[Abstract]:As an important form of optical fiber communication, all-optical network can meet the high standard of big data transmission. Quantum Dot Semiconductor Optical Amplifier (QD-SOA) is widely used in optical amplification and optical conversion because of its fast gain recovery characteristics in the active region. In addition to wavelength converters, all optical logic gate devices and all optical logic computing devices can be constructed based on QD-SOA. According to different modulation modes, there are three kinds of all-optical logic devices realized by QD-SOA. The QD-SOA all-optical logic devices with cross-phase modulation effect (XPM) have the characteristics of larger extinction ratio and less chirp than those of other modulation modes. The content of this paper is as follows: 1. According to the theoretical knowledge of QD-SOA, the static and dynamic models of QD-SOA are established, and Newton iteration method and fourth order Runge-Kutta method are used to obtain the variation of carrier concentration and light field, which is the basis of studying QD-SOA wavelength conversion and logic devices. 2. The wavelength conversion characteristics of QD-SOA-XPM are studied. The phase conversion and phase change characteristics based on XPM effect are analyzed. By changing the external injection current, the inverse phase conversion of the output can be realized. When I _ (1) I _ (2) is 40mA, the conversion waveform is in-phase output, and when I _ (1) is 40 mA ~ (2) I _ (2) is 10mA, the conversion waveform is inversely output. In addition, the variation of phase is analyzed by the variation of carrier concentration. 3. Based on the simulation of QD-SOA-XPM effect, the effects of injection current, 蟿 w _ 2, input pump power, pulse width, maximum mode gain and active region length on the performance of logic or gate are studied. The simulation results show that the Q factor and extinction ratio can be increased when the injection current is increased, the 蟿 W 2 and the maximum mode gain are decreased, and the pump power is increased. The change trend of Q factor and extinction ratio is opposite when the pulse width is compared with the active region length. Therefore, the proper pump power, pulse width and active region length should be chosen. Based on QD-SOA-XPM effect, an all-optical half-adder is implemented by using logic XOR gate and the cascade of logic and gate. The effects of injection current, 蟿 w _ 2, pulse width, maximum mode gain and active region length on the performance of the half-adder are investigated. Through simulation analysis, it is concluded that decreasing 蟿 w _ 2, pulse width, maximum mode gain and appropriate length of active region can increase the contrast and reduce the pattern effect, but for the applied injection current, Contrast and pattern effect change law is opposite, so we should choose the appropriate parameters. 5. 5. Based on the simulation of QD-SOA-XPM effect, an all-optical half-reducer is realized. P01 / P11 is used as the parameter to measure the performance of the half-reducer. The effects of the external injection current, 蟿 w _ 2, pulse width, maximum mode gain and active region length on the performance of the half-reducer are analyzed by simulation. The input parameters with good performance of the semi-reducer are obtained. Specifically, when the injection current is 50 Ma, 蟿 w 2 is 2 pss, pulse width is 0.5 pss, the maximum mode gain is 1800m-1, and the length of active region is 1.8mm, the performance of the all-optical half-demultiplexer is improved.
【学位授予单位】：曲阜师范大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN929.1
本文编号：2267152
[Abstract]:As an important form of optical fiber communication, all-optical network can meet the high standard of big data transmission. Quantum Dot Semiconductor Optical Amplifier (QD-SOA) is widely used in optical amplification and optical conversion because of its fast gain recovery characteristics in the active region. In addition to wavelength converters, all optical logic gate devices and all optical logic computing devices can be constructed based on QD-SOA. According to different modulation modes, there are three kinds of all-optical logic devices realized by QD-SOA. The QD-SOA all-optical logic devices with cross-phase modulation effect (XPM) have the characteristics of larger extinction ratio and less chirp than those of other modulation modes. The content of this paper is as follows: 1. According to the theoretical knowledge of QD-SOA, the static and dynamic models of QD-SOA are established, and Newton iteration method and fourth order Runge-Kutta method are used to obtain the variation of carrier concentration and light field, which is the basis of studying QD-SOA wavelength conversion and logic devices. 2. The wavelength conversion characteristics of QD-SOA-XPM are studied. The phase conversion and phase change characteristics based on XPM effect are analyzed. By changing the external injection current, the inverse phase conversion of the output can be realized. When I _ (1) I _ (2) is 40mA, the conversion waveform is in-phase output, and when I _ (1) is 40 mA ~ (2) I _ (2) is 10mA, the conversion waveform is inversely output. In addition, the variation of phase is analyzed by the variation of carrier concentration. 3. Based on the simulation of QD-SOA-XPM effect, the effects of injection current, 蟿 w _ 2, input pump power, pulse width, maximum mode gain and active region length on the performance of logic or gate are studied. The simulation results show that the Q factor and extinction ratio can be increased when the injection current is increased, the 蟿 W 2 and the maximum mode gain are decreased, and the pump power is increased. The change trend of Q factor and extinction ratio is opposite when the pulse width is compared with the active region length. Therefore, the proper pump power, pulse width and active region length should be chosen. Based on QD-SOA-XPM effect, an all-optical half-adder is implemented by using logic XOR gate and the cascade of logic and gate. The effects of injection current, 蟿 w _ 2, pulse width, maximum mode gain and active region length on the performance of the half-adder are investigated. Through simulation analysis, it is concluded that decreasing 蟿 w _ 2, pulse width, maximum mode gain and appropriate length of active region can increase the contrast and reduce the pattern effect, but for the applied injection current, Contrast and pattern effect change law is opposite, so we should choose the appropriate parameters. 5. 5. Based on the simulation of QD-SOA-XPM effect, an all-optical half-reducer is realized. P01 / P11 is used as the parameter to measure the performance of the half-reducer. The effects of the external injection current, 蟿 w _ 2, pulse width, maximum mode gain and active region length on the performance of the half-reducer are analyzed by simulation. The input parameters with good performance of the semi-reducer are obtained. Specifically, when the injection current is 50 Ma, 蟿 w 2 is 2 pss, pulse width is 0.5 pss, the maximum mode gain is 1800m-1, and the length of active region is 1.8mm, the performance of the all-optical half-demultiplexer is improved.
【学位授予单位】：曲阜师范大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN929.1
【参考文献】
相关期刊论文 前6条
1 ;Quantum computation on gate-defined semiconductor quantum dots[J];Chinese Science Bulletin;2012年16期
2 赵梓森;;光纤通信的过去、现在和未来[J];光学学报;2011年09期
3 胡越;李培丽;;全光半减器的研究进展[J];半导体光电;2011年01期
4 D.Bimberg;C.Meuer;M.Lmmlin;S.Liebich;J.Kim;A.Kovsh;I.Krestnikov;G.Eisenstein;;Nonlinear properties of quantum dot semiconductor optical amplifiers at 1.3μm Invited Paper[J];Chinese Optics Letters;2008年10期
5 胡振华,黄德修;半导体光放大器的非简并时延四波混合理论[J];光学学报;2004年08期
6 孙军强,张新亮,陈娟,黄德修,易河清;基于半导体光放大器四波混频波长转换的理论研究[J];电子学报;1999年11期
相关博士学位论文 前3条
1 覃翠;半导体光放大器的载流子动态特性研究[D];华中科技大学;2013年
2 吴兆喜;基于半导体光放大器（SOA）的波长转换技术研究[D];厦门大学;2008年
3 罗莹;半导体量子点电子结构的理论研究[D];北京师范大学;1999年
相关硕士学位论文 前3条
1 李雯;基于QD-SOA-XPM的全光波长转换器的研究[D];曲阜师范大学;2016年
2 陈廷廷;基于XGM的QD-SOA全光波长转换特性的研究[D];曲阜师范大学;2015年
3 余建兴;基于量子点半导体光放大器交叉增益调制效应的全光逻辑门研究[D];西南交通大学;2011年
，本文编号：2267152
本文链接：https://www.wllwen.com/kejilunwen/xinxigongchenglunwen/2267152.html
