微波波导连接器无源互调的研究
[Abstract]:In recent years, with the rapid development of the communication industry, the number of users has increased dramatically, and the large-scale construction of communication links has made the use of passive devices very common. At the same time, passive Intermodulation (Passive Intermodulation,PIM) interference caused by the nonlinearity of passive devices is becoming more and more serious. Once the passive Intermodulation product falls into the frequency band of the receiver, it will seriously affect the communication quality of the system. Therefore, the problem of how to reduce the passive Intermodulation interference is paid more and more attention by the communication industry, and the passive Intermodulation interference in the communication system should be reduced. It is necessary to study the mechanism of passive Intermodulation, so the study of passive Intermodulation is of theoretical and practical significance. Based on the rectangular waveguide connector, the generation mechanism of passive Intermodulation is analyzed and a two-stage cascade model of passive devices is established. The generation mechanism of passive intermodulation mainly includes material nonlinearity and contact nonlinearity. Contact nonlinearity at waveguide junction is one of the common reasons of passive intermodulation. The main nonlinear mechanism is contact mechanism and semiconductor mechanism. According to the contact mechanism, the two waveguide flanges which appear to be in close contact with each other, from the microscopic point of view, only occur on a few microprotrusions in rough planes. When the current flowing through the waveguide junction accumulates to the contact protrusions, it is nonlinear because of the sudden contraction of the contact flanges. Resulting in passive Intermodulation. The semiconductor mechanism mainly comes from the metal-insulator-metal (Metal-Insulator-Metal,MIM) structure at the junction of the waveguide. Because of air oxidation and contamination, a layer of nanoscale insulating layer is formed on the flange surface to form a MIM structure. In this paper, the quantum tunneling effect and the hot electron emission effect in semiconductor mechanism are studied. The main influencing factors of the intermodulation interference in the two effects and the variation trend of passive Intermodulation current density with each factor are analyzed. Under the same conditions, the dominant mechanism is discussed, which is of guiding significance to reduce the intermodulation interference of passive devices. With the extensive use of passive devices, there is more than one passive device in a communication link. In view of the common phenomenon of cascading passive devices at present, the passive device is simplified as a waveguide junction and a two-stage cascade model is established. After the input carrier signal passes through two waveguide junctions continuously, the change of passive intermodulation power is analyzed, considering that the transmission line used to connect the two waveguide junctions has an effect on the phase of the input carrier signal. The relationship between the phase difference of the input carrier signal and the phase length of the transmission line is studied in order to avoid the accumulative maximum of the passive intermodulation power effectively. The aim of reducing passive Intermodulation interference is achieved.
【学位授予单位】:华北电力大学
【学位级别】:硕士
【学位授予年份】:2017
【分类号】:TN814
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