基于缩短极化码的MLC NAND Flash差错控制技术研究

发布时间：2018-12-31 17:39

【摘要】：为了提高MLC NAND Flash的抗误码性能,该文提出一种基于优化缩短极化码的MLC NAND Flash差错控制方法。优化缩短极化码通过优化删减图样得到,首先通过比特翻转重排序的方式得到基本删减图样,进而选择具有更低信道容量的冻结比特组成优化删减图样,使得到的删减比特全为冻结比特,可以显著提高删减算法的纠错性能。同时,根据MLC单元错误的不对称性,采用码率自适应的码字对FLASH中MSB和LSB进行不等错误保护。仿真结果表明:当误帧率为310-时,优化缩短极化码较相同码长的LDPC码和基本缩短极化码分别约有3.72~5.89 d B和1.47~3.49 d B增益;相比基于同一码率的优化缩短极化码方案,不等错误保护的差错控制方案获得约0.25 d B增益。
[Abstract]:In order to improve the error-resistant performance of MLC NAND Flash, a MLC NAND Flash error control method based on optimized shortened polarization codes is proposed. The optimized shortened polarization code is obtained by optimizing the truncation pattern. Firstly, the basic deleted pattern is obtained by the way of bit reversal reordering, and then the frozen bit with lower channel capacity is selected to form the optimized deletion pattern. All the deleted bits are frozen bits, which can improve the error-correcting performance of the deletion algorithm. At the same time, according to the asymmetry of MLC unit error, the MSB and LSB in FLASH are protected by bit rate adaptive codeword. The simulation results show that when the frame error rate is 310-, the gain of the optimized shortened polarization code (LDPC code) and the basic shortened polarization code (BPC) are about 3.72kHz 5.89dB and 1.4710dB respectively. Compared with the optimized shortened polarization code scheme based on the same bit rate, the error control scheme with unequal error protection gains about 0.25 dB gain.
【作者单位】：杭州电子科技大学通信工程学院;
【基金】：浙江省自然科学基金(LY16F010013) 浙江省重点科技创新团队基金(2013TD03) 国家自然科学基金(61401130)~~
【分类号】：TN911.22

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