基于多量子阱二极管的全双工可见光通信系统
发布时间：2019-01-28 19:11
【摘要】：随着可见光通信技术在国内外研究领域不断取得突破性的进展,可见光通信技术已经受到越来越多来自社会和人们的关注,同时依托于半导体材料技术的发展和革新,新型发光二极管工艺的不断完善,可见光通信技术迎来了前所未有的发展契机。可见光通信技术具有传输速率快、保密性好、绿色环保以及不占用频带资源的优势,除此之外,在近距离传输中,其视距传播的局限性将被大大减小,本文也将介绍一种利用微米级的新型半导体发光二极管来进行全双工通信的系统。在传统射频通信中,同时同频全双工通信(CCFD)由于其自身严重的传输干扰,始终是一个挑战。对于可见光通信而言,两个发光二极管可以构成一个半双工的通信传输系统,但是不能构成全双工的通信系统。在本论文中,介绍了一种使用一对微米级InGaN/GaN多量子阱二极管的片上全双工通信系统,可以同时检测和发射光信号。针对该系统,论文主要工作如下:(1)将同时同频双工与可见光通信技术相结合,介绍了这两项技术目前国内外的发展状况,针对现有技术的不足和空缺,进行提高和创新,应用新型半导体材料的优良特性,搭建微米级的片上系统,结合可见光通信高速、安全、视距传输的特性,为同时同频全双工技术开辟了新的道路。(2)分析可见光通信光源的特性,介绍了发光二极管的发光原理。在具体场景下,对传统的发光二极管和多量子阱二极管的响应度进行分析和比较。同时,介绍了光电检测器的工作原理,并将其进行分类,比较不同的光电检测器的性能指标。(3)介绍了该同时同频全双工系统的各个模块划分,对每一个模块进行详细的分析,给出明确的硬件设备及各项参数,说明每一个模块对应的分工和作用。同时,具体介绍了多量子阱二极管的各项特性及工艺流程。(4)提供完整的系统设计依据和算法,针对电路中的各项参数逐一进行分析,证明其能够进行全双工通信的可行性,给出多组数据进行比较,优化电路中的各项参数,提高整个系统的有效性和稳定性。
[Abstract]:With the breakthrough of visible light communication technology at home and abroad, visible light communication technology has been paid more and more attention from society and people, while relying on the development and innovation of semiconductor material technology. With the continuous improvement of new light-emitting diode technology, visible light communication technology ushered in an unprecedented development opportunity. The visible light communication technology has the advantages of fast transmission rate, good confidentiality, green environment protection and no use of frequency band resources. In addition, the limitation of its line-of-sight propagation will be greatly reduced in the close-range transmission. This paper also introduces a novel semiconductor light-emitting diode (LED) system for full duplex communication. In traditional RF communication, simultaneous full duplex communication (CCFD) is always a challenge due to its own serious transmission interference. For visible light communication, two light-emitting diodes can form a half-duplex communication transmission system, but not a full-duplex communication system. In this paper, a full-duplex on-chip communication system using a pair of micrometer InGaN/GaN multiple quantum well diodes is introduced, which can detect and transmit optical signals at the same time. The main work of this paper is as follows: (1) combining simultaneous frequency duplex with visible light communication technology, the development of these two technologies at home and abroad is introduced. Based on the excellent characteristics of new semiconductor materials, a micron scale on-chip system is built, which combines the characteristics of high speed, security and line-of-sight transmission of visible light communication. It opens a new way for simultaneous frequency full-duplex technology. (2) analyzing the characteristics of visible light source and introducing the principle of light-emitting diode (LED). In this paper, the responsivity of traditional LED and MQW diode is analyzed and compared. At the same time, the working principle of the photodetector is introduced, and it is classified to compare the performance of different photodetectors. (3) the module partition of the full duplex system with the same frequency is introduced. Each module is analyzed in detail, the hardware equipment and parameters are given, and the corresponding division of labor and function of each module is explained. At the same time, the characteristics and technological process of multiple quantum well diodes are introduced in detail. (4) the design basis and algorithm of the system are provided, and the parameters in the circuit are analyzed one by one. The feasibility of full duplex communication is proved, and the comparison of multiple sets of data is given to optimize the parameters of the circuit to improve the effectiveness and stability of the whole system.
【学位授予单位】：南京邮电大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN929.1
本文编号：2417227
[Abstract]:With the breakthrough of visible light communication technology at home and abroad, visible light communication technology has been paid more and more attention from society and people, while relying on the development and innovation of semiconductor material technology. With the continuous improvement of new light-emitting diode technology, visible light communication technology ushered in an unprecedented development opportunity. The visible light communication technology has the advantages of fast transmission rate, good confidentiality, green environment protection and no use of frequency band resources. In addition, the limitation of its line-of-sight propagation will be greatly reduced in the close-range transmission. This paper also introduces a novel semiconductor light-emitting diode (LED) system for full duplex communication. In traditional RF communication, simultaneous full duplex communication (CCFD) is always a challenge due to its own serious transmission interference. For visible light communication, two light-emitting diodes can form a half-duplex communication transmission system, but not a full-duplex communication system. In this paper, a full-duplex on-chip communication system using a pair of micrometer InGaN/GaN multiple quantum well diodes is introduced, which can detect and transmit optical signals at the same time. The main work of this paper is as follows: (1) combining simultaneous frequency duplex with visible light communication technology, the development of these two technologies at home and abroad is introduced. Based on the excellent characteristics of new semiconductor materials, a micron scale on-chip system is built, which combines the characteristics of high speed, security and line-of-sight transmission of visible light communication. It opens a new way for simultaneous frequency full-duplex technology. (2) analyzing the characteristics of visible light source and introducing the principle of light-emitting diode (LED). In this paper, the responsivity of traditional LED and MQW diode is analyzed and compared. At the same time, the working principle of the photodetector is introduced, and it is classified to compare the performance of different photodetectors. (3) the module partition of the full duplex system with the same frequency is introduced. Each module is analyzed in detail, the hardware equipment and parameters are given, and the corresponding division of labor and function of each module is explained. At the same time, the characteristics and technological process of multiple quantum well diodes are introduced in detail. (4) the design basis and algorithm of the system are provided, and the parameters in the circuit are analyzed one by one. The feasibility of full duplex communication is proved, and the comparison of multiple sets of data is given to optimize the parameters of the circuit to improve the effectiveness and stability of the whole system.
【学位授予单位】：南京邮电大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN929.1
【参考文献】
相关期刊论文 前10条
1 宋小庆;赵梓旭;陈克伟;廖自力;;可见光通信应用前景与发展挑战[J];激光与光电子学进展;2015年08期
2 邵仲岩;丁磊;;利润池视角下我国物联网产业战略研究[J];改革与战略;2013年05期
3 汪井源;徐智勇;朱勇;经继松;王荣;文湘益;;室内可见光通信中噪声与干扰的实验与仿真分析[J];光电子.激光;2012年07期
4 黄治同;纪越峰;;Efficient user access and lamp selection in LED-based visible light communication network[J];Chinese Optics Letters;2012年05期
5 骆宏图;陈长缨;傅倩;赵惠珊;莫晨晓;;白光LED室内可见光通信的关键技术[J];光通信技术;2011年02期
6 郑爱华;;浅析LED的发光原理[J];科协论坛(下半月);2010年11期
7 路秋生;;LED照明与应用[J];电源技术应用;2010年03期
8 毛德丰;郭伟玲;高国;沈光地;;功率LED热特性分析[J];照明工程学报;2009年02期
9 胡国永;陈长缨;陈振强;;白光LED照明光源用作室内无线通信研究[J];光通信技术;2006年07期
10 郝国强,张永刚,刘天东,李爱珍;InGaAs PIN光电探测器的暗电流特性研究[J];半导体光电;2004年05期
相关会议论文 前1条
1 钟镇;何磊;顾晓峰;;直视链路可见光通信系统信道的研究[A];中国光学学会2011年学术大会摘要集[C];2011年
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