基片集成脊波导毫米波板间垂直互联结构研究
发布时间：2019-05-21 18:16
【摘要】：在毫米波系统级封装(System-On-Package,SOP)中,需要一种宽带、小型化、易集成的板间垂直互联电路,以实现不同功能层之间毫米波信号的可靠互联。不同于常规基片集成波导(SIW),提出一种基于Z向基片集成脊波导(Substrate-Integrated-Riged-Waveguide,SIRW)的毫米波板间垂直互联结构。该结构体积小、易集成,可与多层基板加工工艺兼容、一体化同步实现。最后利用低温共烧陶瓷(Low Temperature Co-fired Ceramic,LTCC)加工工艺,制作了背靠背互联实物,电路接口尺寸2.2 mm×1.3 mm,经测试在28~36 GHz频带内实现单个互联插损小于0.45dB,带内平坦度优于±0.5 dB,回波损耗优于-12 dB。
[Abstract]:In millimeter wave system level packaging (System-On-Package,SOP), a broadband, miniaturized and easy to integrate vertical interconnection circuit is needed to realize the reliable interconnection of millimeter wave signals between different functional layers. Different from the conventional substrate integrated waveguide (SIW), a vertical interconnection structure between millimeter wave plates based on Z-direction substrate integrated ridge waveguide (Substrate-Integrated-Riged-Waveguide,SIRW) is proposed. The structure is small in size, easy to integrate, compatible with multi-layer substrate processing technology, and realized synchronously. Finally, the back-to-back interconnection is fabricated by using the low temperature co-fired ceramic (Low Temperature Co-fired Ceramic,LTCC). The circuit interface size of 2.2 mm 脳 1.3 mm, is tested to achieve a single interconnection insertion loss of less than 0.45 dB in the 28 鈮，
本文编号：2482288
[Abstract]:In millimeter wave system level packaging (System-On-Package,SOP), a broadband, miniaturized and easy to integrate vertical interconnection circuit is needed to realize the reliable interconnection of millimeter wave signals between different functional layers. Different from the conventional substrate integrated waveguide (SIW), a vertical interconnection structure between millimeter wave plates based on Z-direction substrate integrated ridge waveguide (Substrate-Integrated-Riged-Waveguide,SIRW) is proposed. The structure is small in size, easy to integrate, compatible with multi-layer substrate processing technology, and realized synchronously. Finally, the back-to-back interconnection is fabricated by using the low temperature co-fired ceramic (Low Temperature Co-fired Ceramic,LTCC). The circuit interface size of 2.2 mm 脳 1.3 mm, is tested to achieve a single interconnection insertion loss of less than 0.45 dB in the 28 鈮，
本文编号：2482288
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