多通道滤光片制备中的光吸收器及Lift-Off光刻工艺研究

发布时间：2018-03-02 14:08

本文选题：多通道滤光片　切入点：厚胶光刻　出处：《浙江大学》2016年硕士论文　论文类型：学位论文

【摘要】：在现代光学信息技术中,多通道滤光片在遥感探测、彩色显示、图像采集等方面有着广泛的应用。在这些应用中常常需要小型化、集成化的多通道滤光片,而基于金属掩膜法或拼接法的传统工艺难以制作这类滤光片。因此如何制作高精度的多通道滤光片成为一个亟待解决的问题。本文围绕着多通道滤光片中的关键技术展开,主要研究内容包括：金属-介质光吸收膜的设计与制备。光吸收镀膜在杂散光抑制、红外光热探测、太阳能光热转换等方向有着广泛的应用。本文基于金属-介质结构设计了可见光波段的光吸收膜,采用单纯形算法和模拟退火算法合成并优化膜系结构。此外还基于蒙特卡诺法进一步分析了膜系中各层镀制误差对膜系性能的影响。实际制备得到的Cr/Si02结构光吸收膜平均反射率为2.14%,可以满足实际使用需求。厚胶光刻技术的工艺实验研究。复杂膜系和红外膜系的膜层厚度常常达到几十微米以上,如果采用光刻工艺制作,则要求相应的光刻胶厚度在100μm以上。而现有的用于制作多通道滤光片的Lift-Off光刻技术制作的光刻胶图案厚度在10μm以下,不能满足上述要求。本文采用双层涂胶法制备了厚度200μm左右的超厚光刻图案,可以满足复杂膜系或红外膜系多通道滤光片的制作需求。光刻技术的参数优化实验。本文采用NR21-20000P和NR9-8000光刻胶作为研究对象,详细研究了各工艺参数对光刻胶图形侧壁形貌质量的影响,测定了光刻胶的显影速率、透过率等参数随工艺条件的变化情况,最后通过正交实验确定了组合优化实验参数。通过Lift-Off工艺制得的滤光片过渡区小于6μm。
[Abstract]:In modern optical information technology, multichannel filters are widely used in remote sensing, color display, image acquisition and so on. However, the traditional process based on metal mask or splicing method is difficult to make this kind of filter. Therefore, how to make high precision multichannel filter becomes a problem to be solved urgently. The main research contents include: the design and preparation of metal-dielectric optical absorption film, the suppression of stray light, infrared photothermal detection, Solar photothermal conversion has a wide range of applications. In this paper, a visible light absorption film is designed based on metal-dielectric structure. The structure of film system was synthesized and optimized by simplex algorithm and simulated annealing algorithm. In addition, the influence of coating error on the properties of film system was further analyzed based on Monte Carlo method. The light absorption of Cr/Si02 structure was obtained. The average reflectivity of the film is 2.14, which can meet the practical application requirements. Experimental study on the technology of thick rubber lithography. The thickness of the complex film system and the infrared film system is often more than tens of microns. If the lithography process is used, the thickness of the corresponding photoresist is required to be more than 100 渭 m. However, the thickness of the photoresist pattern made by the existing Lift-Off lithography technology for making multichannel filters is less than 10 渭 m. It can not meet the above requirements. In this paper, the ultra-thick photolithographic pattern with thickness of about 200 渭 m was prepared by double-layer coating method. It can meet the production requirement of multi-channel filter of complex film system or infrared film system. The parameter optimization experiment of lithography technology. In this paper, NR21-20000P and NR9-8000 photoresist are used as the research object. The influence of various technological parameters on the side wall morphology of photoresist was studied in detail. The development rate and transmittance of photoresist were measured. Finally, the optimal experimental parameters were determined by orthogonal experiment. The transition region of the filter prepared by Lift-Off process was less than 6 渭 m.
【学位授予单位】：浙江大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TH74;TN305.7

【参考文献】