CMOS温度传感器的研究与设计

发布时间：2018-01-04 12:18

  本文关键词：CMOS温度传感器的研究与设计　出处：《东南大学》2017年硕士论文　论文类型：学位论文

  更多相关文章： CMOS温度传感器 寄生双极型晶体管 斩波 动态匹配 Σ-△ADC

【摘要】：温度传感器在医疗设备、消费性电子和工业控制等领域都不可或缺。相比于传统的温度传感器,集成的CMOS温度传感器体积更小、功耗更低、易于集成且可以直接与数字系统相连,其应用前景将更加广泛。本文设计的CMOS温度传感器采用TSMC 65nm LP CMOS工艺,基于偏置在不同电流密度下的两个双极型晶体管的基极-射极电压差△VBE与绝对温度成正比的特性,利用模数转换器将该电压差进行精确量化,最终得到温度的数字输出。本文分析了 CMOS工艺下寄生双极型晶体管的温度特性,并对温度传感器中的各种非理想因素造成的误差进行了详细的讨论,其中包括|VBE|的非线性、有限电流增益片和各种失调(包括运放的失调、电流镜的失配等)等所引起的误差,并给出了相应的解决方案。针对有限电流增益β采用了电流偏置电路,针对运放的失调采用了斩波技术,针对电流镜的失配采用了动态匹配技术等。由于在实际应用中,对温度测量的速度要求较低,而对精度要求较高,本文采用12位一阶Σ-△ADC来进行量化工作;Σ-△ADC中的积分器采用了带增益提高技术的两级运放,仿真结果显示,其低频增益达到108dB。整个电路芯片面积为0.588mm×0.536mm,后仿真结果表明:当电源电压为1.2V,输入参考时钟为400kHz时,在TT工艺角下,芯片总体功耗为1.25mW,温度误差在0℃到60℃的测温范围内达到了±0.47℃;在SS和FF工艺角下,温度误差在0℃到60℃的测温范围内小于±1.46℃。
[Abstract]:Temperature sensors are indispensable in medical devices, consumer electronics and industrial control. Compared with traditional temperature sensors, integrated CMOS temperature sensors are smaller in size and lower in power consumption. It is easy to integrate and can be directly connected with digital system, and its application prospect will be more extensive. The CMOS temperature sensor designed in this paper adopts TSMC 65nm LP CMOS process. Based on the characteristic that the base-emitter voltage difference (VBE) of two bipolar transistors with bias at different current density is proportional to the absolute temperature, the voltage difference is accurately quantized by A / D converter. Finally, the digital output of temperature is obtained. The temperature characteristics of parasitic bipolar transistor in CMOS process are analyzed, and the error caused by various non-ideal factors in temperature sensor is discussed in detail. It includes the nonlinearity of VBE, the error caused by finite current gain plate and various misalignment (including the mismatch of current mirror and so on). The current bias circuit is used for finite current gain 尾 and chopping technology is used for the misalignment of operational amplifier. The dynamic matching technology is used for the mismatch of the current mirror. Because in the practical application, the speed of the temperature measurement is lower, but the precision is higher. In this paper, 12-bit first order 危-ADC is used for quantization. The integrator in 危-ADC adopts two-stage operational amplifier with gain enhancement technique. The simulation results show that. The low frequency gain reaches 108 dB and the whole chip area is 0.588mm 脳 0.536mm. The simulation results show that when the voltage of power supply is 1.2V. When the input reference clock is 400kHz, the overall power consumption of the chip is 1.25 MW at the TT processing angle, and the temperature error is 卤0.47 鈩，

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