CMOS有源像素图像传感器的电子辐照损伤效应研究

发布时间：2018-04-29 05:19

本文选题：电子辐照 + CMOS有源像素传感器　；参考：《发光学报》2017年02期

【摘要】：对某国产CMOS图像传感器进行了两种不同能量的电子辐照试验,在辐照前后及退火过程中采用离线测量方法,考察了暗信号、饱和电压、光谱响应特性等参数,分析了器件的电子辐照效应损伤机理。结果表明:暗信号和暗信号非均匀性都随着辐照剂量的增加及高温退火时间的延长而增大;饱和电压在两种能量电子辐照下均出现较大幅度的减小,并在高温退火过程中有所恢复;光谱响应特性无特别明显变化。经分析,暗电流、饱和电压的变化主要由辐照诱发的氧化物陷阱电荷导致的光敏二极管耗尽层展宽和界面陷阱电荷密度增大导致产生-复合中心的增加所引起。
[Abstract]:Two kinds of electron irradiation experiments with different energy were carried out on a domestic CMOS image sensor. The parameters of dark signal, saturation voltage and spectral response were investigated by off-line measurement method before and after irradiation and during annealing. The mechanism of electron irradiation damage is analyzed. The results show that the inhomogeneity of dark signal and dark signal increase with the increase of irradiation dose and the increase of annealing time at high temperature, and the saturation voltage decreases greatly under two kinds of energy electron irradiation. The spectral response has no obvious change during high temperature annealing. The results show that the variation of dark current and saturation voltage is mainly caused by the depletion layer broadening of Guang Min diode induced by irradiation and the increase of interface trap charge density resulting in the increase of production-recombination center.
【作者单位】：中国科学院特殊环境功能材料与器件重点实验室新疆电子信息材料与器件重点实验室中国科学院新疆理化技术研究所;中国科学院大学;重庆光电技术研究所;
【基金】：国家自然科学基金(11005152,11275262)资助项目~~
【分类号】：TP212

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