基于MEMS的小型化圆时栅传感器研究
[Abstract]:With the development of microelectronics industry, the sensor is gradually developing towards miniaturization and high precision. Based on this, this paper focuses on the study of a new type of miniaturized electric field-type circular time-gate sensor. The electric field circular time gate sensor uses the orthogonal electric field to construct the moving reference frame and directly uses the electric field coupling way to induce the electric signal. Compared with the traditional time gate, the electric field circular time gate sensor reduces the intermediate link of the induction signal and has stronger anti-jamming ability. The MEMS micro / nano machining technology is used to process the electrode plate, which ensures the precision of the sensor. Electric field circular time gate is a new type capacitive displacement sensor with simple structure, low power consumption, simple signal acquisition and processing process, which is conducive to the miniaturization and high integration of the sensor. In addition to the miniaturization of the sensor, it is necessary to improve the measurement accuracy of the sensor. Therefore, the combination of theoretical analysis, model simulation and experimental verification should be adopted. Gradually form a set of guiding electric field type circular time gate sensor theory. In this paper, the structure of grid displacement sensor based on electric field circle is optimized. The main work is as follows: 1. The space-time coordinate transformation theory, mechanical time-gate principle and magnetic field-type time-gate principle are described. The double-row structure and single-row structure of electric field-type circular time-gate sensor are deeply studied, and their working principles are described in detail. 2. Based on the COMSOL Multiphysics multi-physical field simulation software, the double-row structure of the sensor is simulated firstly, and the reason of the difference between the inner and outer two cycles of the double-row structure is clarified, and the secondary error is analyzed in combination with the theory. In order to eliminate this difference, the structure of the sensor is optimized into a single-row structure, and the single-row structure is simulated and analyzed, and the structure size and the number of antipods of the miniaturized sensor are determined. Fabrication of optimized sensors by MEMS micro / nano process. 3. According to the experimental requirements, the experimental platform is set up, and a lot of experiments are carried out by combining theoretical analysis and simulation results. Firstly, the optimization of the sensor from double-row structure to single-row structure is verified by experiments. Then, according to the experimental error data and theoretical analysis in the single-row structure, the error source is found, and the structure optimization is carried out. The secondary error will be brought about by the two standing wave amplitude difference, installation tilt, pole manufacturing error and so on. When the amplitude of the excitation signal is different, the two standing wave phases are not strictly orthogonal to produce one or two errors, and the third and fifth harmonics of the sensor will bring about four times errors. Through a lot of experimental verification and error analysis, the structure of the sensor is continuously optimized. The experimental results show that the final experimental accuracy of the circular time gate sensor with diameter of 57mm is 卤10 "and the resolution is 0.2".
【学位授予单位】:重庆理工大学
【学位级别】:硕士
【学位授予年份】:2017
【分类号】:TP212
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