石墨烯薄膜的RF-PECVD法制备及其特性研究

发布时间：2018-01-19 03:01

本文关键词： 石墨烯射频等离子体增强化学气相沉积铜镍　出处：《郑州大学》2017年硕士论文　论文类型：学位论文

【摘要】：石墨烯具有独特的二维蜂窝状结构以及优异的物理和化学特性,被誉为“新材料之王”。近年来,各国的政府、企业和科研院所对石墨烯的研究极为重视,开启了石墨烯的研究热潮。化学气相沉积法是大规模制备高品质石墨烯薄膜的最有利方法之一。射频等离子体增强化学气相沉积系统(RF-PECVD)与传统CVD方法相比,可以实现更低的生长温度、更好的节能和更高的生产效率。利用RF-PECVD系统制备硅、碳化硅等材料已被研究和应用多时,并且也可以成功制备碳纳米管、金刚石及类金刚石薄膜等碳类薄膜,用该系统制备石墨烯薄膜的研究目前仍存在很大空间,其成膜质量有待进一步提高,制备工艺参数对成膜的影响和机理作用等方面的探索需要进一步拓展和加深。本文采用射频等离子体增强化学气相沉积系统,通入甲烷提供碳源,以氢气为辅助气体,在铜箔和镍片上成功制备出了石墨烯薄膜,利用正交实验和控制变量的实验方法,探究了气体流量及比例、生长温度、反应压强、射频功率、沉积时间、样品位置等实验参数对薄膜生长的影响,根据场发射扫描电子显微镜(SEM)、能谱分析(EDS)、原子力显微镜(AFM)、透射电子显微镜(TEM)、拉曼光谱(Raman)、X射线衍射(XRD)等方法对薄膜样品进行结构和形貌表征与分析。此外,对镍基底上制备得到的石墨烯进行了硬度和摩擦系数测试和分析,对铜基底上生长的石墨烯进行转移后测试其透光性。实验结果表明,在铜基底和镍基底上均在较低的生长温度下成功制备出了以多层为主的石墨烯薄膜,该薄膜能够有效提高基底的硬度和降低基底的摩擦系数,并具有良好的透光性能。
[Abstract]:Graphene, with its unique two-dimensional honeycomb structure and excellent physical and chemical properties, is known as the "king of new materials". In recent years, governments, enterprises and research institutes in various countries have attached great importance to the study of graphene. Chemical vapor deposition (CVD) is one of the most favorable methods for preparing high quality graphene thin films on a large scale. Radio Frequency Plasma enhanced Chemical Vapor deposition (RF-PECVD). Compared with the traditional CVD method. It can achieve lower growth temperature, better energy saving and higher production efficiency. Silicon, silicon carbide and other materials prepared by RF-PECVD system have been studied and applied for a long time. Carbon nanotubes, diamond and diamond-like carbon films can also be successfully prepared. There is still a lot of room for the study of graphene thin films prepared by the system, and the quality of the films needs to be further improved. The influence of preparation process parameters on film formation and its mechanism need to be further expanded and deepened. In this paper, radio frequency plasma enhanced chemical vapor deposition system is used to provide carbon source through methane. Graphene thin films were successfully prepared on copper foil and nickel substrates with hydrogen as auxiliary gas. The flow rate and proportion of gas growth temperature and reaction pressure were investigated by orthogonal experiment and variable control method. The influence of experimental parameters such as RF power, deposition time and sample location on the growth of thin films was investigated by means of field emission scanning electron microscopy (SEM), energy spectrum analysis (EDS) and atomic force microscopy (AFM). The structure and morphology of the thin films were characterized and analyzed by means of transmission electron microscopy (TEM), Raman spectroscopy (Raman) and X-ray diffraction (XRD). The hardness and friction coefficient of graphene prepared on nickel substrate were measured and analyzed. The transmittance of graphene grown on copper substrate was tested after transfer. Graphene thin films were successfully prepared on copper and nickel substrates at low growth temperature. The films can effectively improve the hardness of the substrates and reduce the friction coefficient of the substrates. And has a good transmittance.
【学位授予单位】：郑州大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TQ127.11;TB383.2

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