热调谐V型腔半导体激光器及其传感应用研究

发布时间:2018-01-28 04:43

  本文关键词: 可调谐激光器 V型腔可调谐激光器 甲烷检测 自混频效应 出处:《浙江大学》2016年博士论文 论文类型:学位论文


【摘要】:21世纪,随着物联网概念的兴起,消费者和企业级网络用户急需一种成本低廉可靠性高的网络解决方案,而传感器领域也迎来了小型化、集成化、分布式的潮流。可调谐半导体激光器在这两个方面都扮演了重要角色,尽管在过去30多年来取得了瞩目的进步,仍不能满足目前市场提出的低成本、高性能等需求。本课题围绕V型腔半导体激光器(V-Cavity Laser, VCL),展开了针对热调谐VCL的理论与实验工作,并拓展了其针对甲烷吸收检测和测量学方面的应用。本论文首先通过归纳比较V型腔激光器的各调谐方式,提出一种片上集成加热电阻的V型腔激光器。作为原有V型腔激光器的改进版本,该器件继承了制作封装成本低、紧凑度高的特点。通过仿真,我们设计了顶部加热的片上电阻结构;证明该结构与原有电注入调谐比较,在理论上具有更高的调谐效率。实验上,该激光器在1550nm波段获得了28nm的单电极数字式调谐范围和51nm的单温度调谐范围,以及采用简单电流控制算法的10.8nm准连续调谐范围。根据实验结果计算的单电极调谐效率为0.136nm/mW,显著高于原有VCL。在线宽和信道热切换时间性能均有进步的前提下,该器件将VCL的直接调制性能提升了一个台阶。2.5Gbps直接调制的25km标准单模光纤传输功率代价低于0.3dB,5Gbps和8.5Gbps直接调制实现了10km单模光纤的无误码传输,且在实验上首次获得了VCL上10Gbps直接调制的10km传输眼图。这一系列优越性能使集成片上加热电阻的V型腔激光器可以应用于波分复用光网络、数据中心光网络和传感器。针对气体传感应用,我们设计并制作了1650nm波段的V型腔激光器。该器件实现了1650nm附近16nm的调谐范围,35dB左右的边模抑制比,和低于500kHz的线宽。作为一种廉价的可调谐光源,1650nm的VCL有望占据一部分甲烷检测市场。在测量学领域,我们研究了VCL的自混频效应。采用阈值方程模型,我们验证了VCL自混频效应用于速度、位移的检测,以及结合调频连续波的测距。实验上,我们利用自主开发的集成了片上光电二极管的VCL,实现了对目标物震动频率和幅度的检测。这种集成了光源、探测器和干涉光路的检测方案将受到传感器市场的欢迎。
[Abstract]:In 21th century, with the rise of the concept of the Internet of things, consumers and enterprise-level network users urgently need a low-cost and reliable network solution, and the sensor field has also ushered in miniaturization and integration. Distributed power flow. Tunable semiconductor lasers play an important role in both areas. Despite the remarkable progress made in the past 30 years, they still can not meet the low cost proposed by the current market. High performance and other requirements. The theoretical and experimental work of thermal tuned VCL has been carried out around V-Cavity Laser. VCLs. And the application of methane absorption detection and measurement is expanded. Firstly, the tuning modes of V-cavity laser are summarized and compared. A V cavity laser with on-chip integrated heating resistance is proposed. As an improved version of the original V-cavity laser, the device inherits the characteristics of low packaging cost and high compactness. We have designed the on-chip resistance structure which is heated at the top of the chip. It is proved that the structure has higher tuning efficiency in theory than that in the original electric injection tuning. The laser has a single electrode digital tuning range of 28 nm and a single temperature tuning range of 51 nm in the 1550nm band. The tuning efficiency of single electrode is 0.136 nm / mW, which is calculated from the experimental results and the quasi-continuous tuning range of 10.8 nm using simple current control algorithm. It is significantly higher than the original VCL.The performance of both on-line width and channel hot switching time are improved. This device improves the direct modulation performance of VCL by a step of 2.5 Gbps. The transmission power cost of 25km standard single-mode fiber with direct modulation is less than 0.3 dB. The direct modulation of 5Gbps and 8.5Gbps realizes the BER transmission of 10km single-mode fiber. The 10km transmission eye diagram of 10Gbps direct modulation on VCL is obtained for the first time. This series of superior performance makes V-cavity laser with on-chip heating resistance applicable to wavelength division multiplexing optical network. . Data center optical networks and sensors. For gas sensing applications, we have designed and fabricated a 1650nm V-cavity laser with a tuning range of 1650nm. The edge-mode rejection ratio of about 35dB and linewidth of less than 500kHz. As a cheap tunable light source, VCL at 1650nm is expected to occupy part of the methane detection market. We study the self-mixing effect of VCL. Using the threshold equation model, we verify that the self-mixing effect of VCL is used to detect velocity, displacement, and range measurement combined with frequency-modulated continuous wave. We use the self-developed VCLs to integrate the on-chip photodiodes to realize the detection of the vibration frequency and amplitude of the target, which is an integrated light source. Detector and interference detection scheme will be welcomed by the sensor market.
【学位授予单位】:浙江大学
【学位级别】:博士
【学位授予年份】:2016
【分类号】:TN248.4

【相似文献】

相关期刊论文 前10条

1 吴正茂;光栅外腔半导体激光器的调谐范围[J];应用激光;1996年03期

2 关宝璐;郭霞;杨浩;梁庭;顾晓玲;郭晶;邓军;高国;沈光地;;宽调谐范围垂直腔面发射激光器特性分析及设计[J];物理学报;2007年08期

3 周小红,陈建国,李义峰,李大义,卢玉村,韩松;减反射膜与外腔半导体激光器调谐范围[J];半导体光电;1997年06期

4 谌立新;;我国成功改写纳米线激光器调谐范围的世界记录[J];功能材料信息;2009年03期

5 ;国内外专家合作改写纳米线激光器调谐范围世界纪录[J];电子元件与材料;2009年03期

6 谌立新;;我国成功改写纳米线激光器调谐范围的世界纪录[J];功能材料信息;2009年02期

7 周小红,陈建国,,卢玉村;射线法研究外腔半导体激光器的调谐范围[J];半导体光电;1996年02期

8 薛价猷;1,4双[β-(取代苯基)乙烯基]苯衍生物的激光转换效率与调谐范围测试[J];中国激光;1983年04期

9 周金芳;李明范;;基于超磁致伸缩材料的光纤光栅调谐范围研究(英文)[J];光子学报;2007年01期

10 ;中美合作纳米线激光器研究获进展打破半导体激光器调谐范围世界纪录[J];光学仪器;2009年02期

相关会议论文 前1条

1 李国华;吕治辉;张栋文;袁建民;;利用GaSe差频产生THz的研究[A];第十五届全国原子与分子物理学术会议论文摘要集[C];2009年

相关重要报纸文章 前1条

1 通讯员 黄红立;湖大改写纳米线激光器调谐范围世界纪录[N];湖南日报;2009年

相关博士学位论文 前1条

1 邓浩瑜;热调谐V型腔半导体激光器及其传感应用研究[D];浙江大学;2016年



本文编号:1469799

资料下载
论文发表

本文链接:https://www.wllwen.com/shoufeilunwen/jckxbs/1469799.html


Copyright(c)文论论文网All Rights Reserved | 网站地图 |

版权申明:资料由用户3423c***提供,本站仅收录摘要或目录,作者需要删除请E-mail邮箱bigeng88@qq.com