1200V MPS二极管的模拟与设计

发布时间：2018-01-30 04:37

本文关键词： MPS二极管仿真模型功率整流器　出处：《沈阳工业大学》2017年硕士论文　论文类型：学位论文

【摘要】：电力电子技术的发展对功率半导体器件提出更高的要求,并促进了新型功率半导体器件的诞生。MPS(Merged PIN-Schottky)功率二极管的结构是在肖特基二极管的基础上,在阳极内嵌P+小岛,形成类似于肖特基二极管和PIN二极管的并联,不同的是,肖特基区域和P+区域通过漂移区相互影响,使器件性能得以优化。它结合了二者的优点,既具有肖特基二极管开启电压小、反向恢复时间短、反向恢复峰值电流小的优点,还具有PIN二极管高耐压的优势。优良性能使其能更好的应用在高温高频系统中。为了制造性能优良的MPS二极管器件,本文利用器件仿真软件,对MPS二极管的特性进行仿真模拟与设计。首先,对仿真中所选取的物理模型进行分析,利用这些物理模型对MPS二极管的特性进行仿真,并与理论结果进行对比,以确保仿真正确,在此基础上确定优化方案。其次,对1200V MPS结构参数进行设计,利用恰当的折中曲线选取器件结构参数如:漂移区厚度和掺杂浓度,横向肖特基/P+比例及元胞尺寸。第三,对器件接触功函数和漂移区载流子寿命对器件性能的影响进行仿真分析,给出使得器件性能优化的参考数据范围。第四,对已设计器件进行工艺设计和条件进行仿真,给出具体工艺参数。最后,设计出制造器件工艺流程所需版图。本文完成了1200V MPS二极管的设计,系统地给出器件设计整体流程,为类似的MPS二极管的设计和研究提供一种参考思路和方法。
[Abstract]:The development of power electronics technology puts forward higher requirements for power semiconductor devices. The structure of the power diode is based on Schottky diode. In parallel, the Schottky diode and the PIN diode are formed in parallel, except that the Schottky region and the P region interact with each other through the drift region. It combines the advantages of both, such as small start voltage of Schottky diode, short reverse recovery time and low peak current of reverse recovery. It also has the advantage of high voltage resistance of PIN diode. It can be better used in high temperature and high frequency system because of its excellent performance. In order to manufacture MPS diode device with good performance, this paper makes use of the device simulation software. The characteristics of MPS diodes are simulated and designed. Firstly, the physical models selected in the simulation are analyzed, and the characteristics of MPS diodes are simulated by these physical models. And compared with the theoretical results to ensure that the simulation is correct, on the basis of which the optimization scheme is determined. Secondly, 1200V MPS structural parameters are designed. The device structure parameters such as drift region thickness and doping concentration transverse Schottky / P ratio and cell size are selected by appropriate compromise curve. Third. The effects of contact power function and drift carrier lifetime on the device performance are simulated and analyzed. The reference data range for optimizing the device performance is given. 4th. The process design and simulation of the designed device are carried out, and the specific process parameters are given. Finally, the layout of the manufacturing device process is designed. The design of 1200V MPS diode is completed in this paper. The whole process of device design is given systematically, which provides a reference idea and method for the design and research of similar MPS diodes.
【学位授予单位】：沈阳工业大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN313.4

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