脉冲功率系统中IGBT模块封装的研究

发布时间：2018-01-30 10:17

本文关键词： IGBT 串并联封装 di/dt 可靠性　出处：《西南交通大学》2017年硕士论文　论文类型：学位论文

【摘要】：脉冲功率源是高功率微波领域主要的研究方向之一,紧凑、固态化是脉冲功率技术目前重要的发展方向,脉冲功率系统的性能往往受开关性能的影响。以半导体开关作为系统主开关,逐渐成为脉冲功率源的发展方向,功率IGBT(Insulated Gate Bipolar Transistor)器件也因此得到了广泛的关注。单个IGBT器件的电压和电流的承受能力有限,不能满足脉冲功率系统的要求,对IGBT器件进行串并联操作,会造成系统的体积和回路电感增大。随着半导体技术与制造工艺的发展,采用裸芯阵列封装,可以有效地解决上述问题。因此,基于IGBT的封装设计是脉冲功率系统研制的关键问题之一。本文在已有研究的基础上,设计了 IGBT串并联封装模块,并进行可靠性仿真分析。首先介绍了以IGBT作为主开关的脉冲功率系统研究现状和IGBT裸芯串并联封装的发展历程,分析其中的优缺点及存在的关键问题。对IGBT的基本特性、工作原理和对驱动电路的要求进行介绍,调研分析了 IGBT串并联均压均流电路,并对比分析了封装材料的性能和芯片表面互连材料特性。然后对IGBT单管性能进行了详细的分析,主要包括器件的选型、极限电流及耐压分析等。采用平面变压器为基础的电压型驱动方式,设计IGBT的快速驱动电路,并通过实验测试验证了设计方案的可行性。实验结果表明,在工作电压1kV,负载3.8Ω条件下,集电极电流上升速率di/dt(10%～90%)达到9.75A/ns。在此基础上,设计符合脉冲功率系统中开关要求的串联均压电路和反向电压保护电路,并对电路中元器件的选型进行介绍。设计5kV、1kA的IGBT封装模块的内部结构,整个IGBT封装模块尺寸为68mm*55mm*5mm,并对封装模块进行寄生参数提取和电气绝缘分析。最后为评估封装模块的可靠性,建立IGBT模块损耗模型和热仿真模型,对封装模块进行热分析,并对封装模块较为薄弱的焊接层进行热应力分析,主要包括芯片焊接材料、基板焊接材料的形变和非弹性应变,评估焊接材料的可靠性。通过IGBT模块的失效机理,分别从芯片间键合引线、焊接层和封装模块三个方面对IGBT模块进行寿命预测,仿真计算结果表明:IGBT封装模块的工作循环次数为3.2e9。
[Abstract]:Pulse power source is one of the main research directions in the field of high power microwave. Compact and solid state is an important development direction of pulse power technology at present. The performance of the pulse power system is often affected by the switching performance. The semiconductor switch as the main switch of the system has gradually become the development direction of the pulse power source. Power IGBT(Insulated Gate Bipolar Transistor). The voltage and current tolerance of a single IGBT device is limited. It can not meet the requirements of the pulse power system. Series-parallel operation of IGBT devices will result in the increase of system volume and loop inductance. With the development of semiconductor technology and manufacturing technology, bare core array packaging is adopted. Therefore, the packaging design based on IGBT is one of the key problems in the development of pulse power system. The IGBT series-parallel encapsulation module is designed. Firstly, the research status of pulse power system with IGBT as the main switch and the development course of IGBT bare core series-parallel packaging are introduced. The advantages and disadvantages and the key problems are analyzed. The basic characteristics, working principle and driving circuit requirements of IGBT are introduced. The IGBT series-parallel voltage-sharing circuit is investigated and analyzed. The performance of packaging material and chip surface interconnect material are compared and analyzed. Then the performance of IGBT single tube is analyzed in detail including the selection of devices. The design of IGBT fast drive circuit based on planar transformer is carried out, and the feasibility of the design scheme is verified by experimental test. The experimental results show that the design scheme is feasible. Under the condition of working voltage of 1 kV and load of 3.8 惟, the collector current rising rate dir / DT ~ (10) reaches 9.75 A / N ~ (s). The series voltage sharing circuit and reverse voltage protection circuit are designed to meet the switch requirements in the pulse power system. The selection of components in the circuit is introduced and 5 kV is designed. The internal structure of 1kA IGBT package module, the size of the whole IGBT package module is 68mm / 55mm / 5mm. In order to evaluate the reliability of the package module, the loss model and thermal simulation model of the IGBT module are established, and the thermal analysis of the package module is carried out. The thermal stress of the welding layer which is weak in the package module is analyzed, including chip welding material, substrate welding material deformation and inelastic strain. Evaluate the reliability of welding material. Through the failure mechanism of IGBT module, predict the life of IGBT module from three aspects: interchip bonding lead, welding layer and packaging module. The simulation results show that the working cycle of the package module is 3.2e9.
【学位授予单位】：西南交通大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN322.8

【参考文献】