MgZnO紫外光电探测器研究

发布时间：2018-05-24 23:08

本文选题：射频磁控溅射 + MgZnO薄膜　；参考：《长春理工大学》2017年博士论文

【摘要】：MgZnO半导体材料因具有较宽的光学带隙调节范围(3.3 eV~7.8 eV)、晶格匹配的单晶衬底、较低的制备温度、资源丰富、较强的抗辐射能力,以及无环境污染等优点,使得该半导体材料在紫外光电探测器方面有着广阔的应用前景。本论文通过射频磁控溅射技术制备高质量MgZnO薄膜,采用紫外曝光和湿法刻蚀的方法制备MSM结构的MgZnO紫外光电探测器,主要研究工作如下:(1)利用射频磁控溅射设备在石英衬底上溅射生长了高质量的不同组分的MgZnO半导体薄膜,实现了MgZnO薄膜带隙从可见盲到日盲波段的连续可调,其中采用分段法生长了Mg组分为60%的Mg_(0.60)Zn_(0.40)O立方相薄膜。系统的研究了薄膜的结晶性和光学性能,并详细分析了MgZnO薄膜中Mg的含量与其光学性质的关系。(2)利用紫外曝光和湿法刻蚀的方法实现了MSM结构不同Mg组分的MgZnO紫外光电探测器。系统的分析了信号电阻对ZnO紫外光电探测器的影响,以及从势垒高度角度分析了Mg_(0.20)Zn_(0.80)O与Mg_(0.42)Zn_(0.58)O紫外光电探测器响应度的差异。实现了采用分段法生长制备得到的Mg_(0.60)Zn_(0.40)O日盲光电探测器,并对其性能进行了系统的分析。(3)通过调节插指电极间的距离,进而达到改变耗尽层宽度的目的,实现了对MSM结构MgZnO紫外光电探测器响应度和暗电流的同时调控,并从金属-半导体接触的物理机制方面给以深入的分析。
[Abstract]:MgZnO semiconductor materials have the advantages of wide optical bandgap adjustment range (3.3 eV~7.8 EV), lattice matching single crystal substrates, low preparation temperature, rich resources, strong radiation resistance and no environmental pollution. The semiconductor material has a broad application prospect in UV photodetectors. In this paper, MgZnO thin films with high quality were prepared by RF magnetron sputtering, and MgZnO photodetectors with MSM structure were fabricated by UV exposure and wet etching. The main research work is as follows: (1) High quality MgZnO semiconductor thin films with different components have been grown on quartz substrate by RF magnetron sputtering equipment. The band gap of MgZnO thin film has been continuously adjustable from visible blind to solar blind band. The cubic Mg_(0.60)Zn_(0.40)O thin films with mg content of 60% were grown by subsection method. The crystallization and optical properties of MgZnO thin films were systematically studied. The relationship between mg content and optical properties of MgZnO films was analyzed in detail. The UV photodetectors with different mg components in MSM films were realized by UV exposure and wet etching. The effect of signal resistance on ZnO photodetector and the difference of responsivity between Mg_(0.20)Zn_(0.80)O and Mg_(0.42)Zn_(0.58)O UV photodetectors are analyzed from the angle of barrier height. The Mg_(0.60)Zn_(0.40)O solar blind photodetector fabricated by subsection method is realized, and its performance is analyzed systematically. By adjusting the distance between the electrodes, the width of the depletion layer is changed. The responsivity and dark current of MgZnO photodetectors with MSM structure are regulated simultaneously, and the physical mechanism of metal-semiconductor contact is analyzed.
【学位授予单位】：长春理工大学
【学位级别】：博士
【学位授予年份】：2017
【分类号】：TN23

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