硅基微环谐振器（MRR）的传输特性研究及应用
发布时间：2019-02-23 12:25
【摘要】：晶体管特征尺寸的进一步减小,使大规模集成电路的制造受到了量子隧穿效应等基本物理原理的限制。仅仅依靠减小晶体管尺寸、提高工作频率的电学手段提高信息处理能力的发展遇到了瓶颈。与此同时,随着以物联网为代表的人类社会进程的快速发展,对网络、视频和大数据等信息应用的处理速度和容量都提出了更高的要求。可以说,电子信息处理性能提高的瓶颈和人们对信息处理能力的更高要求的矛盾是目前科研人员亟待解决的重要课题。绝缘衬底上硅材料(SOI,Silicon on Insulator)因具有较高折射率差,对C波段的电磁波具有较强的限制能力,成为制造光电子器件的理想材料。近年来快速发展起来的基于SOI材料的集成光学,继承了数十年来集成电路发展的成果和思路,采用与CMOS(Complementary Metal Oxide Semiconductor)相兼容的工艺条件实现结构紧凑的光学器件。同时,由于硅材料具有良好的等离子色散效应和热光效应,可方便用于SOI材料的光学器件的调谐控制,极大丰富光电子器件功能和适用范围。在众多基于SOI材料光学器件中,微环谐振器(MRR,Microring Resonators)由一个闭合的环形波导和直波导耦合构成,因具有工艺成熟、集成度高及可实现光电混合集成的优点,常用来构建不同用途的光学器件,是硅基集成光子器件的重要构成单元。本文就是围绕基于硅基MRR传输特性及应用展开研究。从基础理论入手,对SOI材料的体系特性和典型的微纳光波导结构、硅基微纳波导的基本理论(电磁场理论、频域耦合模理论和时域耦合模理论),特别是硅基微纳光波导的弯曲耦合进行了梳理和探讨。利用散射矩阵模型对Add-Drop型MRR的滤波、开关和时间特性进行了分析。主要工作包括以下几点:1、阐述了硅基微纳光子器件的制备工艺、测试平台和测试方法和步骤。分析了硅基微纳波导的单模工作条件、辐射损耗与弯曲半径的关系,及耦合系数和耦合端面的设计对器件输出性能的影响。最后,设计、制备和测试了一组不同耦合间距值,波导宽度W(28)400 nm,高度H(28)220 nm,平板厚度h(28)90 nm的Add-Drop型MRR。得出耦合间距与自由光谱区、光学带宽、品质因子的关系。为后续章节可调谐Fano谐振器、光学半加器和一位光学数字比较器的设计提供参考依据。2、阐述了Fano谱形产生的机理,并基于MRR提出了结构简单的可调谐Fano器件。该Fano谐振系统所产生的谐振谱形从根本上说是由具有一定相位差的连续态和离散态的相干光干涉形成的。采用传输矩阵模型分析了该Fano器件的工作原理及结构参数对输出谱形的影响。还对硅基光子器件的调谐原理和调谐方案进行比较和确定,最后在SOI材料上设计、制作一个包含微型热极调谐结构的Fano谐振器。实验结果表明:通过控制微型热极的驱动电压,Fano谐振器输出谱形可以被精确调节。谱形的消光比达到10.02 dB,带边降落比达到101.3dB/nm。3、研究一种被称为“导向逻辑”的光信息处理方案,并以MRR为开关构建出了半加器和一位光学数字比较器。相对于以往提出的结构,不包括任何交叉波导结构且避免单环出现三个耦合区,从而降低器件的传输损耗及交叉串扰,能提高输出信号的质量。并采用输矩阵模型法讨论了一位光学数字比较器的结构参数对器件输出性能的影响。作为原理性验证,利用硅的热光效应实现了光开关的调谐控制,并分析了其对应静态光谱特性,还成功获得了相应的动态结果。最后,根据MRR开关的时间特性,还对半加器和比较器的极限工作速度进行了评估:若MRR的Q值为410,器件的极限工作频率约为6.7 GHz;若MRR的Q值为310,则器件的极限工作频率可达67 GHz。
[Abstract]:The further reduction in the size of the transistor features allows the fabrication of large-scale integrated circuits to be limited by the basic physical principles, such as the quantum tunneling effect. By means of reducing the size of the transistor and improving the electric means of the working frequency, the bottleneck of the development of the information processing capability is improved. At the same time, with the rapid development of the human society process represented by the Internet of Things, the processing speed and the capacity of the information applications such as the network, the video and the big data have higher requirements. It can be said that the bottleneck of the improvement of the electronic information processing performance and the contradiction between people's higher requirements on the information processing ability are an important subject to be solved by the researchers at present. The silicon material on the insulating substrate (SOI, Silicon on Insulator) has a strong limiting ability to the electromagnetic wave of the C-band due to the high refractive index difference, and is an ideal material for manufacturing the optoelectronic device. In recent years, based on the integrated optics of SOI materials, the results and ideas of integrated circuit development have been inherited for decades, and the optical devices with compact structure are realized by the process conditions compatible with CMOS (Complementary Metal Oxide Semiconductor). meanwhile, because the silicon material has good plasma dispersion effect and thermal light effect, the tuning control of the optical device for the SOI material can be conveniently controlled, and the function and the application range of the optical electronic device are greatly enriched. in many SOI-based optical devices, that micro-ring resonator (MRR, MTRR, MTRR, MTRR) is composed of a closed ring-shaped waveguide and a straight waveguide, is an important component of a silicon-based integrated photonic device. In this paper, the transmission characteristics and application of the silicon-based MRR are studied. Based on the basic theory, the system characteristics of the SOI material and the typical micro-nano-optical waveguide structure, the basic theory of the silicon-based micro-nano-wave guide (the electromagnetic field theory, the frequency-domain coupling mode theory and the time-domain coupling mode theory), in particular the bending coupling of the silicon-based micro-nano-optical waveguide, are analyzed and discussed. The filter, switch and time characteristics of the Add-Drop type MRR are analyzed by the scattering matrix model. The main work includes the following points: 1. The preparation process, test platform and test method and procedure of the silicon-based micro-nano-photonic device are described. The relationship between the single-mode working condition, the radiation loss and the bending radius of the silicon-based micro-nano-waveguide is analyzed, and the influence of the coupling coefficient and the design of the coupling end surface on the output performance of the device is analyzed. Finally, a group of different coupling pitch values, the waveguide width W (28) 400 nm, the height H (28) 220 nm, the slab thickness h (28) 90 nm, and the Add-Drop type MRR were designed, prepared and tested. The relationship between the coupling distance and the free spectral region, the optical bandwidth and the quality factor is obtained. this paper provides a reference for the design of the tunable Fano resonator, the optical semi-adder and an optical digital comparator in the subsequent chapters. 2. The mechanism of the Fano spectral shape generation is described, and the tunable Fano device with simple structure is proposed based on the MRR. The resonance spectral shape generated by the Fano resonance system is fundamentally formed by coherent light interference with a certain phase difference and a discrete state. The working principle of the Fano device and the influence of the structural parameters on the output spectrum are analyzed by the transmission matrix model. the tuning principle and the tuning scheme of the silicon-based photonic device are compared and determined, and finally, a Fano resonator with a micro-thermal-electrode tuning structure is manufactured on the SOI material. The experimental results show that the output spectrum of the Fano resonator can be adjusted accurately by controlling the driving voltage of the micro-thermal electrode. The extinction ratio of the spectral shape is 10.02 dB, the edge-to-drop ratio is 101.3dB/ nm. 3, an optical information processing scheme called 鈥減ilot logic鈥，
本文编号：2428819
[Abstract]:The further reduction in the size of the transistor features allows the fabrication of large-scale integrated circuits to be limited by the basic physical principles, such as the quantum tunneling effect. By means of reducing the size of the transistor and improving the electric means of the working frequency, the bottleneck of the development of the information processing capability is improved. At the same time, with the rapid development of the human society process represented by the Internet of Things, the processing speed and the capacity of the information applications such as the network, the video and the big data have higher requirements. It can be said that the bottleneck of the improvement of the electronic information processing performance and the contradiction between people's higher requirements on the information processing ability are an important subject to be solved by the researchers at present. The silicon material on the insulating substrate (SOI, Silicon on Insulator) has a strong limiting ability to the electromagnetic wave of the C-band due to the high refractive index difference, and is an ideal material for manufacturing the optoelectronic device. In recent years, based on the integrated optics of SOI materials, the results and ideas of integrated circuit development have been inherited for decades, and the optical devices with compact structure are realized by the process conditions compatible with CMOS (Complementary Metal Oxide Semiconductor). meanwhile, because the silicon material has good plasma dispersion effect and thermal light effect, the tuning control of the optical device for the SOI material can be conveniently controlled, and the function and the application range of the optical electronic device are greatly enriched. in many SOI-based optical devices, that micro-ring resonator (MRR, MTRR, MTRR, MTRR) is composed of a closed ring-shaped waveguide and a straight waveguide, is an important component of a silicon-based integrated photonic device. In this paper, the transmission characteristics and application of the silicon-based MRR are studied. Based on the basic theory, the system characteristics of the SOI material and the typical micro-nano-optical waveguide structure, the basic theory of the silicon-based micro-nano-wave guide (the electromagnetic field theory, the frequency-domain coupling mode theory and the time-domain coupling mode theory), in particular the bending coupling of the silicon-based micro-nano-optical waveguide, are analyzed and discussed. The filter, switch and time characteristics of the Add-Drop type MRR are analyzed by the scattering matrix model. The main work includes the following points: 1. The preparation process, test platform and test method and procedure of the silicon-based micro-nano-photonic device are described. The relationship between the single-mode working condition, the radiation loss and the bending radius of the silicon-based micro-nano-waveguide is analyzed, and the influence of the coupling coefficient and the design of the coupling end surface on the output performance of the device is analyzed. Finally, a group of different coupling pitch values, the waveguide width W (28) 400 nm, the height H (28) 220 nm, the slab thickness h (28) 90 nm, and the Add-Drop type MRR were designed, prepared and tested. The relationship between the coupling distance and the free spectral region, the optical bandwidth and the quality factor is obtained. this paper provides a reference for the design of the tunable Fano resonator, the optical semi-adder and an optical digital comparator in the subsequent chapters. 2. The mechanism of the Fano spectral shape generation is described, and the tunable Fano device with simple structure is proposed based on the MRR. The resonance spectral shape generated by the Fano resonance system is fundamentally formed by coherent light interference with a certain phase difference and a discrete state. The working principle of the Fano device and the influence of the structural parameters on the output spectrum are analyzed by the transmission matrix model. the tuning principle and the tuning scheme of the silicon-based photonic device are compared and determined, and finally, a Fano resonator with a micro-thermal-electrode tuning structure is manufactured on the SOI material. The experimental results show that the output spectrum of the Fano resonator can be adjusted accurately by controlling the driving voltage of the micro-thermal electrode. The extinction ratio of the spectral shape is 10.02 dB, the edge-to-drop ratio is 101.3dB/ nm. 3, an optical information processing scheme called 鈥減ilot logic鈥，
本文编号：2428819
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