千兆赫片上互联单壁纳米碳管电分析（英文）

发布时间：2018-01-23 17:44

本文关键词： 互联碳纳米管电流密度传播常量特性阻抗片上系统　出处：《Frontiers of Information Technology & Electronic Engineering》2017年02期 　论文类型：期刊论文

【摘要】：在未来的高频系统芯片,特别是片上网络的设计中,知识产权模块之间的联系至为关键,而单壁纳米碳管则是其中一种很有前景的纳米结构。电路及系统尺寸的不断缩减限制了对1000 GH级别高频信号特征的利用。本文针对不同结构构型的单壁纳米碳管,对高质量互联中四项重要的四项电参数——阻抗,传播常量,电流密度以及信号延时进行了推导。每个参数均表现出了对其设计互联频率范围和构型的强相关性。与现有理论和实验结果相比,本文所提出的模型在解决下一代高速集成电路互联问题上有其新颖性。
[Abstract]:In the future high frequency system chip, especially the design of the on-chip network, the connection between intellectual property modules is crucial. Single walled carbon nanotubes are one of the promising nanostructures. The use of high-frequency signal characteristics of GH level. In this paper, single-walled carbon nanotubes with different structures are used. For four important electrical parameters in high quality interconnection, impedance, propagation constant. The current density and signal delay are derived. Each parameter shows strong correlation to the design frequency range and configuration. Compared with the existing theoretical and experimental results. The model presented in this paper is novel in solving the interconnection problem of next generation high-speed integrated circuits.
【作者单位】： Institute
【分类号】：TN47
【正文快照】： 1 IntroductionSystem-on-chip(So C)and embedded computersare in extensive use all over the world today.Manyof the necessary subsystems are available now forintegration into a single chip to construct an So C.These systems require less space and power,and

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