GaN基微腔传感器悬空隔膜的力电转换的ANSYS研究

发布时间：2018-01-03 13:19

本文关键词：GaN基微腔传感器悬空隔膜的力电转换的ANSYS研究　出处：《激光技术》2016年06期 　论文类型：期刊论文

【摘要】：为了深入研究氮化镓薄膜的压电效应和机械特性,基于气体直接吸收红外辐射的原理,将基于氮化镓悬空隔膜的充气微腔红外传感器项目作为背景,以氮化镓/铝镓氮薄膜作为敏感单元,在材料力学以及压电效应方面,采用有限元分析软件ANSYS 14.0进行了理论分析和验证,取得了薄膜形状、厚度和面积等尺寸与压电薄膜输出电压以及薄膜灵敏度的逻辑关系数据,验证了薄膜力-电信号转换机制可行性。结果表明,GaN薄膜材料具有良好的压电特性以及线性度,有助于对探测器输出信号进行准确的预测,并进行温度补偿,突出GaN材料在应用中的优势。此研究对设计性能良好、灵敏度高的微腔红外传感器是有帮助的。
[Abstract]:In order to study the piezoelectric effect and mechanical characteristics of gallium nitride thin film, based on the principle of direct absorption of infrared radiation by gas, the project of inflatable micro-cavity infrared sensor based on gallium nitride suspension diaphragm is taken as the background. Taking gallium nitride / aluminum-gallium nitrogen thin film as sensitive unit, theoretical analysis and verification were carried out by using finite element analysis software ANSYS 14.0 in material mechanics and piezoelectric effect, and the shape of the film was obtained. The logical relation data of thickness and area with the output voltage and the sensitivity of the piezoelectric film verify the feasibility of the conversion mechanism of the film force and electrical signal. The results show that the conversion mechanism of the film force and electrical signal is feasible. GaN thin film material has good piezoelectric characteristics and linearity, which is helpful for accurate prediction of the detector output signal and temperature compensation. This study is helpful for the design of microcavity infrared sensors with good performance and high sensitivity.
【作者单位】：北京工业大学北京光电子技术实验室;电子科技大学中山学院电子薄膜与集成器件国家重点实验室;
【基金】：国家科技支撑计划资助项目(2011BAE01B14) 北京市15青年拔尖基金资助项目(311000543115501) 中山市科技计划资助项目(2014A2FC305) 科研基地建设基金资助项目(PXM2014-014204-500008)
【分类号】：O484;TP212
【正文快照】： 室,中山528400)引言由于氮化镓(Ga N)材料禁带宽度大、化学稳定性好、电子饱和速度高、介电常数小、耐高温、耐腐蚀[1-2]等优点,具有优良的压电、耐高温特性和广泛的应用前景[3-5],使其成为高频、高功率电子器件的研究热点[6],但至今仍然鲜有人用ANSYS对Ga N材料进行系统的模

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