磁控溅射制备Al掺杂氮化铜薄膜研究

发布时间：2018-01-22 19:56

本文关键词： 氮化铜薄膜 Al掺杂光学特性电学特性　出处：《功能材料》2017年05期 　论文类型：期刊论文

【摘要】：利用磁控共溅射方法在玻璃基底上制备出了Al掺杂Cu_3N薄膜,研究了其晶体结构、表面形貌、光学特性和电学特性。XRD结果表明Al掺杂没有引起峰位的明显变化,说明Al替代了Cu的位置或者进入晶界处,并且随掺杂含量升高,结晶度降低;扫描电子显微镜图像表明Al掺杂之后使得氮化铜晶粒形状变得不规则,晶界变得模糊,说明Al掺杂会抑制氮化铜晶体的生长;通过光学透射谱计算得到光学带隙,Al掺杂降低了氮化铜薄膜的光学带隙,并随着掺杂含量的增加而逐渐减小,实现了Al掺杂氮化铜薄膜光学带隙的连续可调,带隙减小源于Al外层电子的局域态进入氮化铜的带隙间,增加了中间态。同时四探针的测试也表明掺杂之后电阻率变小。
[Abstract]:Al-doped Cu_3N thin films were prepared on glass substrates by magnetron co-sputtering. The crystal structure and surface morphology were investigated. The results of optical and electrical properties. XRD show that Al doping does not cause obvious change of peak position, indicating that Al replaces the position of Cu or enters the grain boundary, and the crystallinity decreases with the increase of doping content. Scanning electron microscopy (SEM) images show that Al doping makes the grain shape of copper nitride become irregular and the grain boundary becomes blurred, indicating that Al doping can inhibit the growth of copper nitride crystal. The optical band gap of copper nitride thin films was decreased by optical band gap Al doping, and gradually decreased with the increase of doping content. The optical band gap of Al-doped copper nitride thin film is continuously adjustable, and the band gap decreases when the localized state of the Al outer electron enters the band gap of copper nitride. The intermediate state is increased and the resistivity is reduced after doping.
【作者单位】：湖北民族学院理学院;南京邮电大学材料科学与工程学院;
【基金】：国家自然科学基金资助项目(51172110) 湖北省教育厅基金项目(B20082902)
【分类号】：TB383.2;TQ131.21
【正文快照】： 0引言氮化铜薄膜呈墨绿色,是一种反三氧化铼结构的立方晶体,立方晶体的8个顶角处被N原子占据,立方晶胞的每一边的中点处为Cu原子[1],氮原子和铜原子以离子键和共价键混合的形式结合[2],所以氮化铜薄膜在250[3]~450℃[4]之间即可分解为Cu和N2,这一低温热分解特性也被称作亚稳态

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