光学表面薄膜微结构制备与应用

发布时间：2018-01-25 01:09

本文关键词： 薄膜微光学单点金刚石技术纳米压印技术金字塔结构　出处：《西安工业大学》2017年硕士论文　论文类型：学位论文

【摘要】：薄膜微光学元件在传统微光学元件的基础上,进一步利用具有多层特征的薄膜微结构,在折射、反射和衍射的基础上引入了干涉效应,而且微观结构更加复杂多样,从而表现出新颖的光学特性,实现对光波特性的复杂调制。论文主要研究光学表面薄膜微结构的制备工艺,包括PECVD法制备单层、多层薄膜,单点金刚石技术制作母版,纳米压印技术进行软印章制备、图形化转移,等离子体刻蚀成型,使用等效介质理论和有限元分析法研究该结构的反射光谱特性。具体结论如下:利用PECVD法在硅和硫化锌基底上沉积折射率为1.46的氧化硅薄膜,在薄膜沉积的最佳工艺条件下的沉积速率分别为:42.22nm/min、47.64nm/min。以此,研究了折射率为1.46的氧化硅薄膜随着沉积厚度的增加,其稳定性变化情况:折射率无明显波动,其中在硅基底上薄膜应力无明显变化,但在硫化锌基底上薄膜应力明显增加。在硅基底上沉积折射率分别为1.5、1.6、1.7和1.8的氮氧化硅薄膜,得到薄膜沉积的最佳工艺条件。沉积了这四种折射率条件下的渐变折射率薄膜。沉积了折射率为1.8且厚度分别为100nm、200nm、500nm、900nm的氮氧化硅薄膜。在单点金刚石技术制备了母版的基础上,利用纳米压印技术和等离子体刻蚀技术在镀有氧化硅、氮氧化硅的硅基底上制备以底面积1Oμm×10μm为周期、高5μm的金字塔结构,用扫描电镜测得结构的微观形貌清晰,周期为10.5μm×10.8μm、高为4.57μm。分析可得周期的相对误差是5%～8%、高度的相对误差是8.6%,分析了实验结果产生偏差的原因,为后续改进工艺,提高精度提供了依据。通过使用等效介质理论和有限元分析法对其光谱特性进行了分析,模拟单个金字塔微观结构,仿真得到其反射光场呈周期性分布,其周期随着波长的增大而增大。
[Abstract]:On the basis of the traditional microoptical elements, the thin film microstructures with multilayer characteristics are further utilized, and the interference effect is introduced on the basis of refraction, reflection and diffraction. And the microstructure is more complex, thus showing novel optical properties, to achieve the complex modulation of optical wave characteristics. The preparation process of optical surface thin film microstructure is mainly studied in this paper. It includes the preparation of monolayer, multilayer film by PECVD method, master plate made by single point diamond technology, soft seal preparation by nano-imprint technology, graphic transfer and plasma etching molding. The reflectance spectra of the structure were studied by using equivalent medium theory and finite element analysis. The results are as follows: 1.46 Si oxide thin films with refractive index of 1.46 were deposited on silicon and zinc sulfide substrates by PECVD method. The deposition rates under the optimum deposition conditions are: 42.22 nm / min, 47.64 nm / min, respectively. The stability of silicon oxide thin films with refractive index of 1.46 is studied with the increase of deposition thickness: there is no obvious fluctuation of refractive index, and the stress of films on silicon substrate has no obvious change. However, the stress of the films on zinc sulphide substrates is obviously increased. The silicon oxide films with refractive index of 1.5 ~ 1.61.7 and 1.8 are deposited on silicon substrates respectively. The optimum process conditions were obtained. The graded refractive index films were deposited under these four refractive index conditions. The refractive index of the films was 1.8 and the thickness was 100 nm ~ 200nm ~ 500nm, respectively. Based on the preparation of master plate by single point diamond technology, silicon oxide was deposited by nano-imprint and plasma etching. A pyramid structure with a base area of 10 渭 m 脳 10 渭 m and a height of 5 渭 m was prepared on the silicon substrate of silicon oxide. The microstructure of the structure was clear by SEM. The period is 10. 5 渭 m 脳 10. 8 渭 m and the height is 4. 57 渭 m. The relative error of the available period is 5 ~ 8 and the relative error of height is 8.6%. The causes of the deviation of experimental results are analyzed, which provides a basis for further improvement of technology and accuracy. The spectral characteristics are analyzed by using the theory of equivalent medium and finite element analysis. By simulating the microstructure of a single pyramid, it is found that the reflected light field is periodically distributed, and its period increases with the increase of wavelength.
【学位授予单位】：西安工业大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：O484

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