硅酸锆薄膜制备的研究

发布时间：2018-01-26 08:22

本文关键词： 硅酸锆薄膜溶胶-凝胶法 pH值前驱体浓度抗腐蚀性　出处：《中国陶瓷》2017年09期 　论文类型：期刊论文

【摘要】：以正硅酸乙酯和氧氯化锆为硅源和锆源,去离子水为溶剂,采用溶胶-凝胶法在单晶硅表面制备了硅酸锆薄膜。利用pH计、zeta电位仪、SEM、XRD、AFM等测试手段研究了pH值、前驱体浓度对制备硅酸锆薄膜的影响,并研究了其抗四甲基氢氧化铵(TMAH)/异丙醇(IPA)腐蚀性能。结果表明:优化的pH值为0.5,对应溶胶的zeta电位最大,为43.8m V,所制备的薄膜质量最优;zeta电位随pH值的增加而减小,溶胶的稳定性和薄膜的质量也变差。当前驱体浓度小于0.6mol/L时,薄膜表面粗糙;当前驱体浓度大于0.6 mol/L时,薄膜表面出现了裂纹,且样品出现杂相。最优前驱体浓度为0.6mol/L,制得的硅酸锆薄膜可有效保护单晶硅片免受TMAH/IPA的腐蚀。
[Abstract]:Zirconium silicate thin films were prepared by sol-gel method using ethyl orthosilicate and zirconium oxychloride as silicon and zirconium chloride as source and deionized water as solvent. The effects of pH value and precursor concentration on the preparation of zirconium silicate thin films were studied by means of XRDX AFM. The corrosion resistance of tetramethylammonium hydroxide (TMAH) / isopropyl alcohol (IPA) was studied. The results showed that the optimum pH value was 0.5 and the zeta potential of the corresponding sol was the highest. The film is 43.8mV and the film quality is the best. The zeta potential decreases with the increase of pH value, and the stability of the sol and the quality of the film become worse. When the concentration of the precursor is less than 0.6 mol / L, the surface of the film is rough. When the concentration of precursor was greater than 0.6 mol / L, cracks appeared on the surface of the film, and the sample appeared heterogenous phase. The optimum concentration of precursor was 0.6 mol / L. The prepared zirconium silicate film can effectively protect single crystal silicon from TMAH/IPA corrosion.
【作者单位】：景德镇陶瓷大学材料科学与工程学院;国家日用及建筑陶瓷工程技术研究中心;
【基金】：国家自然科学基金资助项目(51362014,51662016,51402135) 江西省优势科技创新团队建设计划项目(20133BCB 24010) 江西省教育厅基金(GJJ150887,GJJ150919)
【分类号】：TB383.2;TQ134.12
【正文快照】： 0 引言硅酸锆具有高熔点(2550℃)[1]、低热导率(100℃为6.1W/(m·℃)、1500℃为4.0 W/(m·℃))、优异的抗热震抵抗能力[2]、高的折射率(1.96)[3]、优良的抗腐蚀性能[4]等优点,所制备的硅酸锆薄膜是优异的电介质材料[5]和基底保护材料[6-7]。目前,利用光伏效应将太阳能转换

【相似文献】