高性能氧化锌基薄膜压敏电阻的研制

发布时间：2018-01-29 12:21

  本文关键词： 氧化锌薄膜压敏电阻 射频磁控溅射 热浸 电学性能　出处：《中国地质大学(北京)》2017年硕士论文　论文类型：学位论文

【摘要】：随着电子技术的迅速发展,电子器件不断向小型化、低压化发展,而传统的陶瓷制备法受到技术局限难于小型化、低压化,开发薄膜压敏电阻势在必行。但是,目前薄膜压敏电阻的非线性通常较差,为解决这个难题,本文用射频磁控溅射方法,对缺氧型氧化锌(ZnO_(1-x))薄膜中的缺陷类型和水平进行调制,探索其对薄膜组成、结构和电学性能的影响,揭示了其导电机理;并选择低电阻的ZnO_(1-x)薄膜分别在Bi_2O_3和Pr_6O_(11)粉末中热浸,成功制备出高非线性的ZnO基薄膜压敏电阻,研究了热浸温度、时间对其影响。结果表明:(1)通过控制O_2/Ar、溅射气压、溅射功率,成功的制得不同组成的ZnO_(1-x)薄膜。随着O_2/Ar增大,ZnO_(1-x)薄膜晶粒尺寸减小,薄膜厚度减小,晶格常数增大。随着溅射气压的增大,ZnO_(1-x)薄膜晶粒尺寸先增大后减小,薄膜厚度先增大后减小,晶格常数增大。随着溅射功率的增大,ZnO_(1-x)薄膜晶粒尺寸增大,薄膜厚度增大,晶格常数增大。当O_2/Ar较小、溅射气压较小时,薄膜缺陷主要形式为氧空位(VO),主要通过空穴导电,随着O_2/Ar、溅射气压的增大,VO数目减少,电阻率增大。当O_2/Ar较大(大于0.5)、溅射气压较大(大于1.0 Pa)、溅射功率在52-212 W时,薄膜缺陷主要形式为间隙锌(Zni),主要通过电子导电,随着O_2/Ar、溅射气压、溅射功率继续增大,Zni数量增多,电阻率减小。(2)在Bi_2O_3粉末中热浸射频磁控溅射法沉积的ZnO_(1-x)薄膜,成功获得了高性能的ZnO_(1-x)-Bi_2O_3薄膜压敏电阻器。随着热浸温度的升高,非线性系数先增大后减小,漏电流先减小后增大,压敏电压减小;随着热浸时间的延长,非线性系数和压敏电压先增大后减小,漏电流先减小后增大。400℃热浸40 min获得的薄膜压敏电阻器具有最高的非线性系数(15.1)、最小的漏电流(0.0223 mA/cm2)和较低的压敏电压(0.0176 V/nm),这种纳米级厚度的器件在低压的电子/电气设备中具有广泛的应用前景。(3)在Pr_6O_(11)粉末中热浸射频磁控溅射法沉积的ZnO_(1-x)薄膜,成功获得了高性能的ZnO-Pr_6O_(11)薄膜压敏电阻器。随着热浸温度的升高,非线性系数先增大后减小,漏电流先减小后增大,压敏电压降低。700℃热浸50 min获得薄膜压敏电阻器具有最高的非线性系数(39.29)、最小的漏电流(0.02736 mA/cm2)、较低的压敏电压(0.01757 V/nm)和良好的稳定性,这种纳米级厚度的器件在低压的电子/电气设备中具有广泛的应用前景。
[Abstract]:With the rapid development of electronic technology, electronic devices continue to be miniaturized, low-voltage development, but the traditional ceramic preparation method is difficult to miniaturize, low-voltage development, the development of thin film varistor is imperative. At present, the nonlinearity of thin film varistor is usually poor. In order to solve this problem, the RF magnetron sputtering method is used in this paper. The types and levels of defects in anoxic zinc oxide ZnO _ (1-x)) thin films were modulated. The effects of the defects on the composition, structure and electrical properties of the thin films were explored, and the conductive mechanism was revealed. The high nonlinear ZnO thin film varistor was successfully prepared by hot soaking the low resistor ZnOX thin films in Bi_2O_3 and pr\\\ -\\ {6\}\ {6\} O\ +\ +\ {11\}\%\%\%\%\%\%\%\%\%? The effect of hot dip temperature and time on it is studied. The results show that the control of O _ (2 / A), sputtering pressure and sputtering power is achieved by controlling O _ (2 / A) ~ (-1). ZnO _ s _ (1-x) thin films with different composition have been successfully prepared. With the increase of O _ (2 / ar), the grain size and thickness of ZnO _ s _ (1-x) thin films decrease. With the increase of sputtering pressure, the grain size of ZnO _ (1-x) thin films first increases and then decreases, the film thickness first increases and then decreases, and the lattice constants increase with the increase of sputtering power. The crystal size, thickness and lattice constant of ZnO _ s _ (1-x) thin films increase. When O _ (2 / ar) is small and sputtering pressure is small, the main form of defect is oxygen vacancy (VOO). With the increase of sputtering pressure, the number of VO decreases and the resistivity increases with the increase of O _ S _ 2 / Ar. when the O _ s _ (2) / A _ (r) is larger (> 0.5). When the sputtering pressure is larger than 1.0 Pa, and the sputtering power is 52-212 W, the defects of the films are mainly in the form of gap zinc znion, which is mainly electrically conductive, with O _ 2 / ar. At sputtering pressure, the sputtering power continues to increase, and the resistivity decreases. 2) the ZnOS-1-x) thin films deposited by RF magnetron sputtering in Bi_2O_3 powders. A high performance ZnO_(1-x)-Bi_2O_3 thin film varistor has been successfully obtained. With the increase of hot dip temperature, the nonlinear coefficient first increases and then decreases, and the leakage current decreases first and then increases. Voltage sensitivity decreases; With the increase of hot dip time, the nonlinear coefficient and varistor voltage increase first and then decrease. The thin-film varistor obtained by hot-dip 40 min at .400 鈩，

本文编号：1473407