常压射频放电占空比对SiO_x薄膜形貌和成分的影响

发布时间：2018-01-31 05:43

本文关键词： 常压射频等离子体脉冲调制占空比 SiOx薄膜　出处：《东华大学学报(自然科学版)》2017年01期 　论文类型：期刊论文

【摘要】：采用常压射频等离子体放电技术,以六甲基二硅氧烷(HMDSO)和Ar的混合气体为反应源,成功制备了SiO_x薄膜.通过测量放电的电流-电压曲线以及发射光谱,研究不同占空比对射频放电段放电特性的影响;利用扫描电子显微镜(SEM)、X射线能谱仪(EDS)以及X射线光电子能谱(XPS)研究了不同占空比放电条件下沉积的SiO_x薄膜的表面形貌与化学成分.研究结果表明,占空比对射频放电段的放电特性影响不大,但是随着放电脉冲占空比的增加,薄膜表面变得不平滑,椭球形颗粒增多,薄膜中无机成分也相应增加.
[Abstract]:The mixture of Hexamethyldisiloxane (HMDSO) and ar was used as the reaction source. SiO_x thin films were successfully prepared. By measuring the current-voltage curves and emission spectra of the discharge, the effects of different duty cycles on the discharge characteristics of the RF discharge section were studied. Using scanning electron microscopy (SEM). The surface morphology and chemical composition of SiO_x films deposited under different duty cycle discharge conditions were studied by X-ray energy spectrometer (EDS) and X-ray photoelectron spectroscopy (XPS). The ratio of duty to duty has little effect on the discharge characteristics of the RF discharge section, but with the increase of the duty cycle of the discharge pulse, the surface of the film becomes unsmooth, the ellipsoidal particles increase, and the inorganic composition in the film increases accordingly.
【作者单位】：东华大学理学院;
【基金】：国家自然科学基金资助项目(11475043,11375042)
【分类号】：O484;O539
【正文快照】： SiOx是一种被广泛使用的薄膜材料,其在半导体技术中是常见的电介质材料[1],或作为防腐蚀/防渗透材料应用于包装行业[2-3],也可被用于聚合物表面的防刮涂层等[4].近年来,在众多沉积SiOx薄膜的等离子体技术[5-7]中,常压射频等离子体技术因具有设备成本低、等离子体密度高(约为10

【相似文献】