3ω法在薄膜界面热阻测量中的应用

发布时间：2018-02-27 01:09

本文关键词： 3ω法二氧化硅钛酸钡薄膜热导率界面热阻　出处：《电子科技大学》2016年硕士论文　论文类型：学位论文

【摘要】：电子设备小型化带来的热效应问题使得提高薄膜材料热导率和降低薄膜与基底的界面热阻成为提高薄膜器件可靠性的关键因素。设备的过热可能导致电子材料性能有严重退化甚至失效的风险。因此,对材料热学性能的表征对于电子设备的设计和制造至关重要。随着微电子器件在国民经济中越来越广泛的应用,发展针对微电子工业所应用的薄膜材料热物性的表征手段,从而获得更为精确和全面的薄膜材料热物性数据,成为了近年来材料热物性研究的关键问题。D.G.Cahill于上世纪八十年代末基于谐波探测的原理,建立了一种名为3ω法的热物性表征方法。因其具有简单高效的特点,经过多年发展,如今早已成为一种被广泛使用的热物性能表征方法,可以用于测量不同系统下介电材料的体和薄膜热导率。然而,目前这种方法主要的表征对象主要局限在薄膜的热导率,而在表征薄膜传热性能的参数中,另一个重要参数-界面热阻也是非常重要的。因此,将基于谐波探测的3ω方法扩展到对薄膜界面热阻进行表征,从而为航天航空、检测、材料、能源转化、建筑等领域更多地服务,具有重大的应用意义。钛酸钡(BaTiO_3,BTO)薄膜作为一种广泛的被应用在电子陶瓷工业中的钙钛矿结构铁电氧化物,具有良好的铁电、介电以及压电等物理特性。利用3ω法对BTO薄膜热物性进行系统的研究,对BTO薄膜在电子器件中的进一步应用非常必要。在本文的研究中,首先利用3ω法搭建了包含锁相放大器和电桥电路的一套成熟快捷的测试系统。利用此系统测量了干氧氧化法制备的五种不同厚度的SiO_2薄膜的热导率,并根据热阻的公式计算了SiO_2薄膜与Si衬底间的界面热阻,通过测量结果与文献报道结果的比较,验证了测试系统的可靠性。然后在SiO_2薄膜上利用高分子辅助沉积法在H_2气氛中退火生长制备不同层数不同厚度的BaTiO_3薄膜。利用3ω法测试系统测试了BTO/SiO_2多层薄膜的热导率,结合热阻与热导率的关系,分别得到了BaTiO_3薄膜的热导率和BaTiO_3薄膜与SiO_2薄膜之间的界面热阻。通过本文的工作,得到利用高分子辅助沉积法制备的钛酸钡薄膜的热导率为5.56W/mK,钛酸钡与SiO_2的界面热阻为2.02×10-8 m2W/K。通过不确定性分析,估计了热导率测试结果的不确定度大约为15%。热阻的不确定度约为12%。
[Abstract]:The thermal effect caused by the miniaturization of electronic equipment makes it a key factor to improve the reliability of thin film devices by increasing the thermal conductivity of thin film materials and reducing the interfacial thermal resistance between thin film and substrate. The overheating of equipment may lead to electronic material properties. There is a risk of serious degradation or even failure. The characterization of the thermal properties of materials is very important for the design and manufacture of electronic devices. With the increasing application of microelectronic devices in the national economy, the characterization of the thermal properties of thin film materials used in the microelectronics industry has been developed. In order to obtain more accurate and comprehensive thermo-physical data of thin film materials, it has become a key problem in recent years to study the thermo-physical properties of materials .D.G. Cahill based on the principle of harmonic detection at the end of -20s. A method for characterization of thermal properties called 3 蠅 method has been established. Because of its simple and high efficiency, it has become a widely used method for characterization of thermal properties after many years of development. It can be used to measure the bulk and film thermal conductivity of dielectric materials in different systems. However, at present, the main objects of this method are limited to the thermal conductivity of thin films, but in the parameters that characterize the heat transfer properties of thin films, Another important parameter, interface thermal resistance, is also very important. Therefore, the 3 蠅 method based on harmonic detection is extended to characterize the thermal resistance at the interface of the film, so that it can be used for aerospace, detection, material, energy conversion. As a kind of perovskite structure ferroelectric oxide widely used in electronic ceramics industry, barium titanate BaTiO3BTO-thin film has good ferroelectric properties. Physical properties such as dielectric and piezoelectric properties. A systematic study of the thermal properties of BTO thin films by 3 蠅 method is necessary for the further application of BTO thin films in electronic devices. In this paper, a mature and fast testing system including a phase-locked amplifier and an electric bridge circuit is constructed by using 3 蠅 method. The thermal conductivity of five kinds of SiO_2 thin films with different thickness prepared by the dry oxygen oxidation method is measured by this system. Based on the formula of thermal resistance, the interfacial thermal resistance between SiO_2 film and Si substrate is calculated. The measured results are compared with those reported in literature. The reliability of the test system was verified. Then BaTiO_3 thin films with different layers and different thickness were prepared by polymeric assisted deposition method in H2 atmosphere on SiO_2 thin films. The thermal conductivity of BTO/SiO_2 multilayer films was measured by 3 蠅 method. Based on the relationship between thermal resistance and thermal conductivity, the thermal conductivity of BaTiO_3 film and the interfacial thermal resistance between BaTiO_3 film and SiO_2 film are obtained respectively. The thermal conductivity of barium titanate film prepared by polymer assisted deposition is 5.56 W / mK, and the thermal resistance between barium titanate and SiO_2 is 2.02 脳 10 ~ (-8) m ~ (-2) W / K. By uncertainty analysis, the uncertainty of thermal conductivity measurement is estimated to be about 15 and the uncertainty of thermal resistance is about 12.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：O484

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