退火温度对室温沉积的ITO薄膜与p-Si接触性能的影响

发布时间：2018-02-27 08:55

  本文关键词： ITO薄膜 欧姆接触 p型单晶硅 退火　出处：《半导体光电》2016年05期 　论文类型：期刊论文

【摘要】：室温下用射频磁控溅射法在玻璃和p型单晶硅衬底上沉积ITO薄膜,并对其进行不同温度的退火处理。采用XRD衍射仪测试薄膜结晶性,用紫外-可见分光光度计和霍尔效应测试试样光电性能,用吉时利2400表测试ITO/p-Si接触的I-V曲线,用线性传输线模型测试比接触电阻。研究结果表明:室温下沉积的ITO薄膜与p-Si形成欧姆接触,但比接触电阻较大。退火处理可以进一步优化接触性能,200℃退火后试样保持欧姆接触且比接触电阻下降为8.8×10~(-3)Ω·cm~2。随着退火温度进一步升高到300℃,比接触电阻达到最低值2.8×10~(-3)Ω·cm~2,但接触性能变为非线性。
[Abstract]:ITO thin films were deposited on glass and p-type monocrystalline silicon substrates by RF magnetron sputtering at room temperature and annealed at different temperatures. The crystallinity of the films was measured by XRD diffractometer. The photoelectric properties of the samples were tested by UV-Vis spectrophotometer and Hall effect. The I-V curves of ITO/p-Si contacts were measured by using the Jishli 2400 meter. The specific contact resistance was measured by linear transmission line model. The results show that the ITO films deposited at room temperature form ohmic contact with p-Si. But the specific contact resistance is larger. After annealing at 200 鈩，

本文编号：1541995