溶胶凝胶法制备Zn基透明导电薄膜的光电性能的研究

发布时间：2018-02-28 05:14

本文关键词： 氧化锌薄膜退火温度 Mg掺杂　出处：《长春理工大学》2014年硕士论文　论文类型：学位论文

【摘要】：氧化锌(ZnO)作为直接带隙宽禁带半导体材料中的一种,有着3.37eV的禁带宽度,高达60meV的激子束缚能。由于氧化锌薄膜(ZnO)本身的特性所致良好的c轴(c-axis)取向、较高的电阻率,使其拥有了良好的光电特性。使氧化锌薄膜适用于气体检测、液晶成像、紫外发光、摄像技术等领域。本征的氧化锌是n型半导体,p型氧化锌的制备研究已成为当今热点与难点。本文利用简单溶胶-凝胶法(Sol-Gel)旋涂技术在石英衬底上制备氧化锌基透明导电薄膜。由于纯氧化锌薄膜性能不够理想,所以通过对氧化锌薄膜进行Mg掺杂。Mg掺杂能够提高氧化锌透明导电薄膜的工作波长。通过多组对比实验设计以及对工艺的摸索,得到当Mg掺杂浓度为20at%时,薄膜在可见光范围内的平均透光率为90%以上,并且增加了薄膜在紫外区域的透光率。对薄膜进行了UV-Vis、XRD、SEM、PL、霍尔测试表明薄膜在近紫外光到可见光范围内的透光率为90%,薄膜有着良好的c轴取向,并且薄膜保持着六角纤锌矿结构。随着退火温度的升高薄膜的晶粒也逐渐增大,通过PL发现薄膜只有纯相氧化锌的发光峰,说明Mg掺杂进氧化锌的晶格中。
[Abstract]:Zinc oxide (ZnO), as one of the direct bandgap wide band gap semiconductor materials, has a band gap width of 3.37 EV and exciton binding energy of up to 60 MEV. Make ZnO thin film suitable for gas detection, liquid crystal imaging, ultraviolet luminescence, The preparation of n-type semiconductor zinc oxide has become a hot and difficult point. In this paper, a simple sol-gel spin-coating technique is used to prepare transparent conductive ZnO thin films on quartz substrates. Therefore, the working wavelength of transparent conductive ZnO thin films can be increased by doping mg into ZnO thin films. By comparing the experimental design and exploring the process, it is found that when mg doping concentration is 20 at%, The average transmittance of the films in the visible range is more than 90%, and the transmittance of the films in the ultraviolet region is increased. The thin films were characterized by UV-Vis-XRDX SEMPL.The Hall measurements show that the transmittance of the films is 90 in the range from near ultraviolet to visible light, and the films have good c-axis orientation. The structure of hexagonal wurtzite is maintained and the grain size increases with the increase of annealing temperature. It is found by PL that there is only the luminescence peak of pure zinc oxide, which indicates that mg is doped into the lattice of zinc oxide.
【学位授予单位】：长春理工大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：O484.4

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