Mo薄膜性质及对CIGS形貌和结构的影响

发布时间：2018-03-02 01:13

本文关键词： Mo薄膜磁控溅射铜铟镓硒太阳能电池　出处：《真空科学与技术学报》2017年03期 　论文类型：期刊论文

【摘要】：分别用磁控溅射法和共蒸法沉积了Mo和CIGS薄膜。考察了气压和CIGS高温沉积环境对Mo薄膜的影响,研究了Mo基底对CIGS结构和形貌的影响,给出了不同Mo基底上制备的电池效率。结果显示,Mo薄膜具有较强的(110)晶面择优取向,低气压沉积的薄膜结构致密,而高气压沉积的薄膜疏松多孔隙。经CIGS高温工艺后,Mo薄膜晶粒融合,形貌特征消失,其中0.1 Pa沉积的Mo薄膜晶粒融合后表面致密无孔隙,方阻下降,而高气压薄膜孔隙变大,方阻上升。高气压沉积的Mo薄膜中Se扩散现象明显,而低气压薄膜结构致密,有利于遏制Se的扩散。Mo薄膜对CIGS的生长有显著的影响,致密平整的Mo薄膜有利于CIGS晶粒长大形成柱状晶结构,并具有(112)晶面择优取向,而疏松的Mo膜上沉积的CIGS呈等轴晶结构,具有(220/204)晶面择优取向。电池结果显示,0.1 Pa沉积的Mo膜上制备的电池效率达到13.42%,气压增大时,填充因子显著降低,转换效率随之下降。
[Abstract]:Mo and CIGS films were deposited by magnetron sputtering and co-evaporation, respectively. The effects of pressure and CIGS high temperature deposition environment on Mo films were investigated, and the effects of Mo substrates on the structure and morphology of CIGS were investigated. The cell efficiency on different Mo substrates is given. The results show that Mo thin films have a strong preferred orientation on the crystal plane, and the thin films deposited at low pressure have dense structure. After high pressure deposition, the grain size of Mo film fuses, and the morphology of Mo film disappears. The surface of Mo thin film deposited at 0.1 Pa has no porosity, the square resistance decreases, but the pore size of high pressure film becomes larger. The phenomenon of se diffusion in Mo films deposited at high pressure is obvious, while the structure of low pressure films is dense, which is beneficial to restrain the diffusion of se. Mo films have a significant effect on the growth of CIGS. Compact and flat Mo thin films are favorable to the formation of columnar crystal structure of CIGS grains and have preferred orientation of crystal plane, while the CIGS deposited on loose Mo films exhibits equiaxed crystal structure. The results show that the cell efficiency on Mo film deposited at 0.1 Pa reaches 13.42. When the pressure increases, the filling factor decreases significantly and the conversion efficiency decreases.
【作者单位】：北京低碳清洁能源研究所;北京市纳米结构薄膜太阳能电池工程技术研究中心;
【分类号】：TB383.2;TM914.4

【相似文献】