MgNiO薄膜的制备和性能研究

发布时间：2018-03-14 21:23

  本文选题：MgNiO薄膜　切入点：磁控溅射　出处：《哈尔滨工业大学》2017年硕士论文　论文类型：学位论文

【摘要】：近年来,由于紫外探测器可以应用在火焰探测、导弹预警及制导、空间通信等领域而受到了极大的关注。Mgx Ni1-xO三元合金材料通过调节材料中Mg组分大小可以实现带隙从3.6 eV-7.8 eV变化,可实现紫外区的应用。目前,关于MgNiO紫外探测器的研究较少,且大部分研究集中于薄膜的生长。本研究采用磁控溅射的方法,从薄膜生长入手,研究MgNiO薄膜生长规律,对生长过程中出现的相分离和组分偏离进行详细的分析,致力于薄膜质量的提高以及MSM结构的探测器件制备。本文的研究内容主要包括:首先本文对石英衬底上磁控溅射生长MgNiO薄膜的进行了研究。详细研究了溅射工艺参数对MgNiO薄膜性质的影响,包括溅射功率、溅射压强、氧氩比、退火温度和MgO缓冲层。利用X射线衍射、扫描电子显微镜、紫外-可见光谱测试手段分析不同条件对MgNiO薄膜晶体性质和光学性质的影响。最终得到优化溅射工艺参数:溅射功率190 W、溅射压强1.5 Pa、氧氩比15:25。发现退火温度不宜超过700°C,以控制薄膜表面裂纹。初步得到了较优的MgO缓冲层生长参数:溅射功率150 W、溅射压强0.5 Pa、氩气流量40 sccm、溅射时间30 min。然后详细地分析了相分离产生的原因,以及MgNiO薄膜中Mg组分偏离靶材Mg组分的原因。相分离的原因有:a)在较低的生长温度下,Mg原子和O原子在衬底的迁移率要比Ni原子低,容易形成Mg团簇,造成局部区域的Mg元素含量升高;b)退火处理也会对晶体中的组分分布有影响。在退火过程中,间隙Mg原子在获得足够能量之后向Ni空位迁移;c)NiO的饱和蒸气压要比MgO高,退火过程中就会有更多的Ni蒸出,这是退火处理之后元素组分发生变化的主要原因。在溅射过程中,同一时间内会有较多的Ni原子到达衬底使得薄膜的Ni组分要高于靶材。之后通过在Si衬底上MgNiO薄膜的生长,研究了不同缓冲层对MgNiO薄膜生长的影响。通过对Cu缓冲层和MgO缓冲层生长的MgNiO薄膜的性质分析,发现MgO是比较合适的缓冲层。引入缓冲层后,生长的MgNiO薄膜只出现了(200)衍射峰。并且缓冲层极大的抑制了相分离现象,提高了MgNiO的结晶质量。最后在部分晶体质量比较好的样品上通过光刻的方法制备插指电极,制备了MSM结构的MgNiO基光电器件。在8 V偏压下,入射光波长为289 nm下样品的响应度到最大值134.1μA/W。
[Abstract]:In recent years, because ultraviolet detectors can be used in flame detection, missile warning and guidance, Great attention has been paid to the field of space communication. Mg x Ni1-xO ternary alloy materials can change the band gap from 3.6 eV-7.8 EV to 3.6 eV-7.8 EV by adjusting the size of mg component in the material, and can realize the application of ultraviolet region. At present, there are few researches on MgNiO ultraviolet detector. Most of the research is focused on the growth of MgNiO thin films. In this study, the growth law of MgNiO thin films is studied by magnetron sputtering, and the phase separation and component deviation during the growth process are analyzed in detail. The main contents of this paper are as follows: firstly, the magnetron sputtering growth of MgNiO thin films on quartz substrates has been studied. The sputtering process has been studied in detail. The influence of parameters on the properties of MgNiO films, Including sputtering power, sputtering pressure, oxygen / argon ratio, annealing temperature and MgO buffer layer. The effects of different conditions on the crystal and optical properties of MgNiO thin films were analyzed by UV-Vis spectroscopy. The optimized sputtering parameters were obtained as follows: sputtering power 190W, sputtering pressure 1.5 Pa., oxygen / argon ratio 15: 25.The annealing temperature was not found to be high. The optimum growth parameters of MgO buffer layer are obtained: sputtering power 150W, sputtering pressure 0.5 Pa., argon flow rate 40sccm, sputtering time 30 min.Then the reason of phase separation is analyzed in detail. And the reason why mg component deviates from the target mg component in MgNiO thin film. The reason of phase separation is: a) the mobility of mg atom and O atom on substrate is lower than that of Ni atom at lower growth temperature, so mg cluster can be formed easily. During the annealing process, mg atoms in the gap migrate to the Ni vacancy after sufficient energy, and the saturated vapor pressure of the gap mg atoms to the Ni vacancy is higher than that of the MgO, which results in the increase of mg content in the local region and the effect of annealing treatment on the distribution of the components in the crystals, and during the annealing process, the saturated vapor pressure of the gap mg atoms to the Ni vacancies is higher than that of MgO. There will be more Ni evaporation during annealing, which is the main reason for the change of element composition after annealing. At the same time, more Ni atoms arrive on the substrate so that the Ni component of the film is higher than that of the target material. The effects of different buffer layers on the growth of MgNiO thin films were studied. By analyzing the properties of MgNiO films grown by Cu buffer layer and MgO buffer layer, it was found that MgO was a more suitable buffer layer. The phase separation phenomenon was greatly inhibited by the buffer layer, and the crystallization quality of MgNiO was improved. Finally, the interleaved electrode was prepared by photolithography on some samples with better crystal quality. MgNiO based optoelectronic devices with MSM structure have been fabricated, and the responsivity of the sample is up to a maximum of 134.1 渭 A / W at the incident wavelength of 289nm at 8V bias voltage.
【学位授予单位】：哈尔滨工业大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TB383.2;TQ132.2

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