热处理温度对磁控溅射AZO薄膜的电学性能影响

发布时间：2018-03-26 22:24

  本文选题：磁控溅射　切入点：AZO薄膜　出处：《压电与声光》2017年03期

【摘要】：利用射频磁控溅射制备了Al掺杂的ZnO(AZO)薄膜,通过X线衍射(XRD)、原子力显微镜(AFM)及四探针等手段对薄膜进行了表征,研究了不同热处理温度对AZO薄膜的形貌、结构和电学性能的影响。研究表明,Al的掺杂体积分数约为1.2%,随着热处理温度的升高,薄膜颗粒大小均匀,AZO薄膜衍射峰强度先增强后减弱,当热处理温度为450℃时,该AZO薄膜的结晶性最好,电阻率最小为0.024 7Ω·cm。
[Abstract]:Al-doped ZnO AZO thin films were prepared by RF magnetron sputtering. The films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and four probes. The morphology of AZO films with different heat treatment temperatures was studied. The results show that the doping volume fraction of Al is about 1.2. With the increase of heat treatment temperature, the diffraction peak intensity of AZO thin film increases firstly and then weakens, and when the heat treatment temperature is 450 鈩，

本文编号：1669874