金属掺杂氧化钇薄膜的制备及其特性研究

发布时间：2018-03-27 23:05

本文选题：磁控溅射　切入点：金属掺杂　出处：《延边大学》2017年硕士论文

【摘要】：Y_2O_3是一种稀土氧化物,其薄膜具有优良的物理、化学性能,而且高温抗氧化能力强,可用作金刚石的抗氧化保护涂层。此外,Y_2O_3薄膜的透射率和介电常数较高,因此广泛应用于光电设备和半导体设备中。本文利用磁控溅射的方法在Si(100)衬底和玻璃衬底上制备了 Y_2O_3薄膜,并利用X射线衍射(XRD),扫描电子显微镜(SEM),能量色散X射线光谱(EDX)和紫外可见近红外分光光度计分别对薄膜的结构,表面形貌,成分和光学特性进行了研究。在最佳制备条件下,两种衬底上生长的Y_2O_3薄膜都具有单斜相结构,但择优生长方向和结晶性存在一定差异。玻璃衬底上沉积的Y_2O_3薄膜,择优生长方向为(202),结晶性稍差;而Si衬底上沉积的Y_2O_3薄膜,择优生长方向为(111),结晶性良好,在退火后发生了由单斜相向立方相的结构相变,且结晶性和化学计量都有明显改善。利用磁控共溅射的方法制备了 Sn掺杂Y_2O_3(Sn:Y_2O_3)薄膜薄膜和V掺杂Y_2O_3(V:Y_2O_3)薄膜。在一定条件下Sn和V的掺杂都使Y_2O_3薄膜的结晶性得到改善;V掺杂后Y_2O_3薄膜的表面形貌由原来的片状转变为柱状,而且晶粒排布更加紧密,当掺杂时间为15min时,薄膜中出现了立方相结构,这个发现对于提高玻璃衬底上的Y_2O_3薄膜的稳定性具有重要的意义。Sn和V掺杂对Y_2O_3薄膜的光学特性也产生了一定影响,Sn掺杂后Y_2O_3薄膜近红外区域内的透射率增加,另外Sn和V的掺杂都使Y_2O_3薄膜的带隙值明显增加,经计算Sn:Y_2O_3薄膜和V:Y_2O_3薄膜的带隙变化范围分别为4.94-5.06 eV和5.06-5.14 eV。
[Abstract]:Y_2O_3 is a rare earth oxide with excellent physical and chemical properties, strong oxidation resistance at high temperature, and can be used as a protective coating for diamond oxidation. In addition, the transmittance and dielectric constant of Y _ 2O _ 3 thin films are high. Therefore, it is widely used in optoelectronic and semiconductor devices. In this paper, Y_2O_3 thin films were prepared on Si Si 100 substrates and on glass substrates by magnetron sputtering. The structure, surface morphology, composition and optical properties of the thin films were studied by X-ray diffraction, scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and UV-Vis near infrared spectrophotometer, respectively. The Y_2O_3 films grown on two kinds of substrates have monoclinic phase structure, but the preferred growth direction and crystallinity of Y_2O_3 thin films are different. The preferred growth direction of Y_2O_3 thin films on glass substrates is 2022, and the crystallinity of Y_2O_3 films on Si substrates is slightly poor. The preferred growth direction is 111g, and the crystallization is good. After annealing, the phase transition from monoclinic phase to cubic phase occurs. Both crystallization and stoichiometry have been improved obviously. Sn-doped YS _ 2O _ 3SnW _ Y _ 2O _ 3) thin films and V doped Y _ 2O _ 3 / V _ S _ I _ 2O _ 3) thin films have been prepared by magnetron co-sputtering. Under certain conditions, the crystallinity of Y_2O_3 thin films has been improved by Sn and V doping. The surface morphology of Y_2O_3 films was changed from flake to columnar. Moreover, the grain distribution is more compact. When the doping time is 15min, the cubic phase structure appears in the film. This finding has important significance for improving the stability of Y_2O_3 thin films on glass substrates. The optical properties of Y_2O_3 films are also affected by the doping of Sn and V, and the transmittance of Y_2O_3 thin films increases in the near infrared region after doping with Sn. In addition, the band gap values of Y_2O_3 thin films were obviously increased by doping Sn and V, and the band gap ranges of Sn:Y_2O_3 thin films and V:Y_2O_3 thin films were calculated to be 4.94-5.06 EV and 5.06-5.14 EV, respectively.
【学位授予单位】：延边大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：O484

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