p型多晶硅薄膜应变因子与掺杂浓度关系理论研究

发布时间：2018-03-28 06:21

本文选题：多晶硅薄膜　切入点：应变因子　出处：《物理学报》2017年24期

【摘要】：多晶硅薄膜具有良好的压阻特性,晶粒结构和掺杂浓度决定其压阻特性.一般通过调节掺杂浓度改变压阻参数,但现有的多晶硅薄膜压阻系数与掺杂浓度的理论关系和适用范围不够全面.为了完善多晶硅薄膜压阻理论,基于多晶硅纳米薄膜隧道压阻模型,以及硅价带和空穴电导质量随应力改变的机理,提出了一种p型多晶硅薄膜压阻系数算法.该算法分别求取了晶粒中性区和复合晶界区的压阻系数π_(11),π_(12)和π_(44)的理论公式,据此可以计算任意择优晶向排列多晶硅的纵向和横向压阻系数.根据材料的结构特性,求取了p型多晶硅纳米薄膜和普通多晶硅薄膜应变因子,绘制了应变因子与掺杂浓度的关系曲线,与测试结果比较,具有较好的一致性.因此,该算法全面和准确,对多晶硅薄膜的压阻特性的改进和应用具有重要意义.
[Abstract]:Polycrystalline silicon thin films have good piezoresistive properties, and their piezoresistive properties are determined by grain structure and doping concentration. In order to perfect the piezoresistive theory of polycrystalline silicon films, the tunneling piezoresistive model of nanocrystalline polysilicon films is based on the model. As well as the mechanism that the conductivity mass of silicon valence band and hole change with stress, an algorithm for calculating the piezoresistive coefficient of p type polycrystalline silicon thin films is proposed. The theoretical formulas of the piezoresistive coefficients 蟺 _ S _ (11), 蟺 _ T _ (12) and 蟺 _ S _ (44) of grain neutral region and composite grain boundary region are obtained by this algorithm. Based on this, the longitudinal and transverse piezoresistive coefficients of polysilicon with arbitrary preferential orientation can be calculated. According to the structural characteristics of the material, the strain factors of p-type polysilicon nanocrystalline films and ordinary polycrystalline silicon films are obtained. The curve of the relationship between strain factor and doping concentration is drawn, which is in good agreement with the measured results. Therefore, the algorithm is comprehensive and accurate, which is of great significance for the improvement and application of the piezoresistive characteristics of polycrystalline silicon thin films.
【作者单位】：沈阳化工大学信息工程学院;沈阳工业大学信息科学与工程学院;
【基金】：辽宁省自然科学基金指导计划(批准号:20170540718)资助的课题~~
【分类号】：O484

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