NiO_x多晶薄膜的变温电阻开关特性与隧穿机制

发布时间：2018-03-29 20:26

  本文选题：NiOx多晶薄膜　切入点：电阻开关特性　出处：《科学通报》2017年11期

【摘要】：利用射频磁控溅射方法沉积制备了Ag/NiO_x/Pt存储单元,研究了其微结构、电阻开关特性随测试温度的变化.微结构观测分析发现,沉积制备薄膜为富氧的NiO_x多晶薄膜.Ag/NiO_x/Pt存储单元的电流-电压测试曲线呈现阈值型电阻开关特性:分别在2.1~2.4 V的正偏压范围和-2~-2.2 V的负偏压范围内观测到了高低电阻态之间的稳定可逆跳变.随着测试温度的升高,负偏压范围的电阻开关现象在140℃基本消失,而正偏压范围内的电阻开关现象可维持到270℃.运用指数定律拟合室温电流-电压曲线结果表明,薄膜隧穿电流属于缺陷主导的空间限制电流;运用Arrhenius作图法拟合的电流-温度曲线满足线性关系,表明薄膜隧穿电流随测试温度的变化符合肖特基热激发隧穿机制.在周期性电场作用下,从银电极扩散进入薄膜内的Ag离子的氧化还原反应导致存储单元呈现阈值型电阻开关特性.
[Abstract]:The Ag/NiO_x/Pt memory cells were deposited by RF magnetron sputtering. The microstructure and the change of the resistance switch characteristics with the measured temperature were studied.The microstructural observation analysis shows that,The current-voltage test curves of oxygen-enriched NiO_x polycrystalline films. Agr / nio / Pt memory cells showed threshold resistance switching characteristics: high and low voltages were observed in the positive bias range of 2.1V / 2.4V and the negative bias voltage range of -2V / 2.2V, respectively.Stable reversible jump between resistance states.With the increase of test temperature, the resistance switch phenomenon in the negative bias range basically disappears at 140 鈩，

本文编号：1682711